Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

Juwon Lee; Ganapathi Subramaniam Nagarajan; Yoon Shon; Younghae Kwon; Tae Won Kang; Deuk Yong Kim; Hyungsang Kim; Hyunsik Im; Chang Soo Park; Eun Kyu Kim

doi:10.1063/1.4994044

Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

Juwon Lee, Ganapathi Subramaniam Nagarajan, Yoon Shon, Younghae Kwon, Tae Won Kang, Deuk Yong Kim, Hyungsang Kim, Hyunsik Im, Chang Soo Park, Eun Kyu Kim

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Bismuth doped ZnO (ZnBi_0.03O_0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10^-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10^-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.

Original language	English
Article number	085114
Journal	AIP Advances
Volume	7
Issue number	8
DOIs	https://doi.org/10.1063/1.4994044
State	Published - 1 Aug 2017

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title = "Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor",

abstract = "Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.",

author = "Juwon Lee and Nagarajan, {Ganapathi Subramaniam} and Yoon Shon and Younghae Kwon and Kang, {Tae Won} and Kim, {Deuk Yong} and Hyungsang Kim and Hyunsik Im and Park, {Chang Soo} and Kim, {Eun Kyu}",

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T1 - Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

AU - Lee, Juwon

AU - Nagarajan, Ganapathi Subramaniam

AU - Shon, Yoon

AU - Kwon, Younghae

AU - Kang, Tae Won

AU - Kim, Deuk Yong

AU - Kim, Hyungsang

AU - Im, Hyunsik

AU - Park, Chang Soo

AU - Kim, Eun Kyu

PY - 2017/8/1

Y1 - 2017/8/1

N2 - Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.

AB - Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.

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Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

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