Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

Juwon Lee; Ganapathi Subramaniam Nagarajan; Yoon Shon; Younghae Kwon; Tae Won Kang; Deuk Yong Kim; Hyungsang Kim; Hyunsik Im; Chang Soo Park; Eun Kyu Kim

doi:10.1063/1.4994044

Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

Juwon Lee
, Ganapathi Subramaniam Nagarajan
, Yoon Shon
, Younghae Kwon
, Tae Won Kang
, Deuk Yong Kim
, Hyungsang Kim
, Hyunsik Im
, Chang Soo Park
, Eun Kyu Kim

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Bismuth doped ZnO (ZnBi_0.03O_0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10^-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10^-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.

Original language	English
Article number	085114
Journal	AIP Advances
Volume	7
Issue number	8
DOIs	https://doi.org/10.1063/1.4994044
State	Published - 1 Aug 2017

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title = "Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor",

abstract = "Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 \% in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.",

author = "Juwon Lee and Nagarajan, \{Ganapathi Subramaniam\} and Yoon Shon and Younghae Kwon and Kang, \{Tae Won\} and Kim, \{Deuk Yong\} and Hyungsang Kim and Hyunsik Im and Park, \{Chang Soo\} and Kim, \{Eun Kyu\}",

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doi = "10.1063/1.4994044",

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T1 - Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

AU - Lee, Juwon

AU - Nagarajan, Ganapathi Subramaniam

AU - Shon, Yoon

AU - Kwon, Younghae

AU - Kang, Tae Won

AU - Kim, Deuk Yong

AU - Kim, Hyungsang

AU - Im, Hyunsik

AU - Park, Chang Soo

AU - Kim, Eun Kyu

PY - 2017/8/1

Y1 - 2017/8/1

N2 - Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.

AB - Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.

UR - https://www.scopus.com/pages/publications/85028557548

U2 - 10.1063/1.4994044

DO - 10.1063/1.4994044

M3 - Article

AN - SCOPUS:85028557548

SN - 2158-3226

VL - 7

JO - AIP Advances

JF - AIP Advances

IS - 8

M1 - 085114

ER -

Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor

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