Abstract
We report resonant magnetotunneling measurements of the energy dispersion near the third X symmetry subband edge in 60 and 70 Å thick AlAs quantum wells with GaAs barriers, grown along z = [001]. An elliptical constant energy surface is observed, oriented parallel to either [110] or [1̄10]. This rotation of 45° with respect to the bulk AlAs Fermi surface is explained by interface induced XX-XY mixing. Our results provide new insight into both γ-XZ and XX-XY mixing, showing conclusively that states with both X1 and X3 symmetry contribute. This contrasts with several recent theoretical studies in which the X1 contribution is zero.
| Original language | English |
|---|---|
| Pages (from-to) | 3693-3696 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 83 |
| Issue number | 18 |
| DOIs | |
| State | Published - 1 Jan 1999 |