TY - GEN
T1 - Scaled LTPS TFTs for low-cost low-power applications
AU - Kim, Soo Youn
AU - Baytok, Selin
AU - Roy, Kaushik
PY - 2011
Y1 - 2011
N2 - Low-temperature polycrystalline-silicon thin-film transistors (LTPS TFTs) have emerged as a promising technology for applications such as low-cost sensor networks. In this paper, we propose a LTPS TFT device optimization methodology based on scaling of silicon body (Tsi) and buried oxide thickness (Tbox). The proposed approach is applicable for both digital and analog circuits. Results show that using the proposed device we can achieve 133X improvement in oscillation frequency of a three-stage ring oscillator (RO) and 31% improvement in operational amplifier (OPAMP) gain (Tsi 10nm and Tbox 10nm) compared to the traditional device structures. We believe that proper optimization of TFT device geometry parameters is necessary to realize low-power, high-performance, and low-cost LTPTS TFT digital & analog/RF circuits.
AB - Low-temperature polycrystalline-silicon thin-film transistors (LTPS TFTs) have emerged as a promising technology for applications such as low-cost sensor networks. In this paper, we propose a LTPS TFT device optimization methodology based on scaling of silicon body (Tsi) and buried oxide thickness (Tbox). The proposed approach is applicable for both digital and analog circuits. Results show that using the proposed device we can achieve 133X improvement in oscillation frequency of a three-stage ring oscillator (RO) and 31% improvement in operational amplifier (OPAMP) gain (Tsi 10nm and Tbox 10nm) compared to the traditional device structures. We believe that proper optimization of TFT device geometry parameters is necessary to realize low-power, high-performance, and low-cost LTPTS TFT digital & analog/RF circuits.
KW - BOX (buried oxide)
KW - Buried-oxide Induced Barrier Lowering (BIBL)
KW - Drain Induced Barrier Lowering (DIBL)
KW - Thin Film Transistor (TFT)
UR - https://www.scopus.com/pages/publications/79959213454
U2 - 10.1109/ISQED.2011.5770812
DO - 10.1109/ISQED.2011.5770812
M3 - Conference contribution
AN - SCOPUS:79959213454
SN - 9781612849140
T3 - Proceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011
SP - 745
EP - 750
BT - Proceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011
T2 - 12th International Symposium on Quality Electronic Design, ISQED 2011
Y2 - 14 March 2011 through 16 March 2011
ER -