Scaling of two dimensional MESFETs for ultra low power applications

W. C.B. Peatman; M. Hurt; H. Park; R. Tsai; M. Shur

Scaling of two dimensional MESFETs for ultra low power applications

W. C.B. Peatman, M. Hurt, H. Park, R. Tsai, M. Shur

Department of Electronics & Electrical Engineering

University of Virginia

Research output: Contribution to conference › Paper › peer-review

4 Scopus citations

Abstract

Presented are new experimental data and simulations of AlGaAs/InGaAs/GaAs 2-D MESFETs which utilize sidewall Schottky contacts on either side of a very narrow 2-D electron gas channel. These devices demonstrate excellent scaling characteristics down to submicron dimensions in both the channel length and the width, which are attributed to the special geometry of the 2D-3D contacts suppressing both the 'narrow channel effect' and the drain induced barrier lowering.

Original language	English
Pages	30-31
Number of pages	2
State	Published - 1995
Event	Proceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA Duration: 19 Jun 1995 → 21 Jun 1995

Conference

Conference	Proceedings of the 1995 53rd Annual Device Research Conference Digest
City	Charlottesville, VA, USA
Period	19/06/95 → 21/06/95

Cite this

@conference{1a1e1109e2f148a698b535f4019af34d,

title = "Scaling of two dimensional MESFETs for ultra low power applications",

abstract = "Presented are new experimental data and simulations of AlGaAs/InGaAs/GaAs 2-D MESFETs which utilize sidewall Schottky contacts on either side of a very narrow 2-D electron gas channel. These devices demonstrate excellent scaling characteristics down to submicron dimensions in both the channel length and the width, which are attributed to the special geometry of the 2D-3D contacts suppressing both the 'narrow channel effect' and the drain induced barrier lowering.",

author = "Peatman, {W. C.B.} and M. Hurt and H. Park and R. Tsai and M. Shur",

year = "1995",

language = "English",

pages = "30--31",

note = "Proceedings of the 1995 53rd Annual Device Research Conference Digest ; Conference date: 19-06-1995 Through 21-06-1995",

}

TY - CONF

T1 - Scaling of two dimensional MESFETs for ultra low power applications

AU - Peatman, W. C.B.

AU - Hurt, M.

AU - Park, H.

AU - Tsai, R.

AU - Shur, M.

PY - 1995

Y1 - 1995

N2 - Presented are new experimental data and simulations of AlGaAs/InGaAs/GaAs 2-D MESFETs which utilize sidewall Schottky contacts on either side of a very narrow 2-D electron gas channel. These devices demonstrate excellent scaling characteristics down to submicron dimensions in both the channel length and the width, which are attributed to the special geometry of the 2D-3D contacts suppressing both the 'narrow channel effect' and the drain induced barrier lowering.

AB - Presented are new experimental data and simulations of AlGaAs/InGaAs/GaAs 2-D MESFETs which utilize sidewall Schottky contacts on either side of a very narrow 2-D electron gas channel. These devices demonstrate excellent scaling characteristics down to submicron dimensions in both the channel length and the width, which are attributed to the special geometry of the 2D-3D contacts suppressing both the 'narrow channel effect' and the drain induced barrier lowering.

UR - http://www.scopus.com/inward/record.url?scp=0029513495&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029513495

SP - 30

EP - 31

T2 - Proceedings of the 1995 53rd Annual Device Research Conference Digest

Y2 - 19 June 1995 through 21 June 1995

ER -

Scaling of two dimensional MESFETs for ultra low power applications

Abstract

Conference

Other files and links

Fingerprint

Cite this