Self-assembled AlxGa1-xN nanorods grown on Si(001) substrates by using plasma-assisted molecular beam epitaxy

Young S. Park, B. R. Hwang, J. C. Lee, Hyunsik Im, H. Y. Cho, T. W. Kang, J. H. Na, C. M. Park

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25 Scopus citations

Abstract

Hexagonal AlxGa1-xN nanorods were grown by plasma-assisted molecular beam epitaxy (PAMBE) on Si(001) substrates. The Al mole fraction was determined from x-ray diffraction (XRD) measurement and its value was varied from 0 to 15. It is found that, under group III-rich conditions, the growth rate of the AlxGa1-xN nanorods decreases and the diameter increases due to the possibility of incorporation of aluminium and gallium. In order to study structural and optical properties, x-ray diffraction and cathodoluminescence (CL) measurements were carried out. The Al content (x) is calculated from these measurements and their values are compared.

Original languageEnglish
Article number018
Pages (from-to)4640-4643
Number of pages4
JournalNanotechnology
Volume17
Issue number18
DOIs
StatePublished - 28 Sep 2006

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