Self-assembled (In1-xMnxx)As diluted magnetic semiconductor quantum dots with high Tc

Hee Chang Jeon; Kwang Jo Chung; Kwang Jae Chung; Tae Won Kang; Tae Whan Kim; Young Jun Yu; Wonho Jhe; Se Ahn Song

doi:10.1016/j.cap.2003.11.012

Self-assembled (In_1-xMnx_x)As diluted magnetic semiconductor quantum dots with high T_c

Hee Chang Jeon, Kwang Jo Chung, Kwang Jae Chung, Tae Won Kang, Tae Whan Kim, Young Jun Yu, Wonho Jhe, Se Ahn Song

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Self assembled (In_1-xMn_x)As diluted magnetic semiconductor quantum dots (QDs) were grown on GaAs(100) substrates by using molecular beam epitaxy with a goal of producing (In_1-xMn_x)As QDs with a semiconductor phase and a high ferromagnetic transition temperature (T_c). High-resolution transmission electron microscopy measurements showed that crystalline (In_0.84Mn_0.16)As QDs were formed on GaAs substrates. Magnetic force microscopy images showed that the formed QDs were symmetric single-domain particles. The magnetization curve as a function of the magnetic field at 5 K indicated that the (In_0.84Mn_0.16)As QDs were ferromagnetic, and the magnetization curve as a function of the temperature showed that the T_c was as high as 400 K. These results indicate that (In_0.84Mn_0.16)As QDs grown on GaAs(100) substrates hold promise for potential applications in quantum bit devices operating at room temperature.

Original language	English
Pages (from-to)	213-216
Number of pages	4
Journal	Current Applied Physics
Volume	4
Issue number	2-4
DOIs	https://doi.org/10.1016/j.cap.2003.11.012
State	Published - Apr 2004

Keywords

(In-Mn)As
Magnetization
Quantum dots

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10.1016/j.cap.2003.11.012

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@article{00e9c1b54eb6447fa6f65bcc5a6ce985,

title = "Self-assembled (In1-xMnxx)As diluted magnetic semiconductor quantum dots with high Tc",

abstract = "Self assembled (In1-xMnx)As diluted magnetic semiconductor quantum dots (QDs) were grown on GaAs(100) substrates by using molecular beam epitaxy with a goal of producing (In1-xMnx)As QDs with a semiconductor phase and a high ferromagnetic transition temperature (Tc). High-resolution transmission electron microscopy measurements showed that crystalline (In0.84Mn0.16)As QDs were formed on GaAs substrates. Magnetic force microscopy images showed that the formed QDs were symmetric single-domain particles. The magnetization curve as a function of the magnetic field at 5 K indicated that the (In0.84Mn0.16)As QDs were ferromagnetic, and the magnetization curve as a function of the temperature showed that the Tc was as high as 400 K. These results indicate that (In0.84Mn0.16)As QDs grown on GaAs(100) substrates hold promise for potential applications in quantum bit devices operating at room temperature.",

keywords = "(In-Mn)As, Magnetization, Quantum dots",

author = "Jeon, {Hee Chang} and Chung, {Kwang Jo} and Chung, {Kwang Jae} and Kang, {Tae Won} and Kim, {Tae Whan} and Yu, {Young Jun} and Wonho Jhe and Song, {Se Ahn}",

year = "2004",

month = apr,

doi = "10.1016/j.cap.2003.11.012",

language = "English",

volume = "4",

pages = "213--216",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Self-assembled (In1-xMnxx)As diluted magnetic semiconductor quantum dots with high Tc

AU - Jeon, Hee Chang

AU - Chung, Kwang Jo

AU - Chung, Kwang Jae

AU - Kang, Tae Won

AU - Kim, Tae Whan

AU - Yu, Young Jun

AU - Jhe, Wonho

AU - Song, Se Ahn

PY - 2004/4

Y1 - 2004/4

N2 - Self assembled (In1-xMnx)As diluted magnetic semiconductor quantum dots (QDs) were grown on GaAs(100) substrates by using molecular beam epitaxy with a goal of producing (In1-xMnx)As QDs with a semiconductor phase and a high ferromagnetic transition temperature (Tc). High-resolution transmission electron microscopy measurements showed that crystalline (In0.84Mn0.16)As QDs were formed on GaAs substrates. Magnetic force microscopy images showed that the formed QDs were symmetric single-domain particles. The magnetization curve as a function of the magnetic field at 5 K indicated that the (In0.84Mn0.16)As QDs were ferromagnetic, and the magnetization curve as a function of the temperature showed that the Tc was as high as 400 K. These results indicate that (In0.84Mn0.16)As QDs grown on GaAs(100) substrates hold promise for potential applications in quantum bit devices operating at room temperature.

AB - Self assembled (In1-xMnx)As diluted magnetic semiconductor quantum dots (QDs) were grown on GaAs(100) substrates by using molecular beam epitaxy with a goal of producing (In1-xMnx)As QDs with a semiconductor phase and a high ferromagnetic transition temperature (Tc). High-resolution transmission electron microscopy measurements showed that crystalline (In0.84Mn0.16)As QDs were formed on GaAs substrates. Magnetic force microscopy images showed that the formed QDs were symmetric single-domain particles. The magnetization curve as a function of the magnetic field at 5 K indicated that the (In0.84Mn0.16)As QDs were ferromagnetic, and the magnetization curve as a function of the temperature showed that the Tc was as high as 400 K. These results indicate that (In0.84Mn0.16)As QDs grown on GaAs(100) substrates hold promise for potential applications in quantum bit devices operating at room temperature.

KW - (In-Mn)As

KW - Magnetization

KW - Quantum dots

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U2 - 10.1016/j.cap.2003.11.012

DO - 10.1016/j.cap.2003.11.012

M3 - Article

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SN - 1567-1739

VL - 4

SP - 213

EP - 216

JO - Current Applied Physics

JF - Current Applied Physics

IS - 2-4

ER -

Self-assembled (In_1-xMnx_x)As diluted magnetic semiconductor quantum dots with high T_c

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