Self-compliant bipolar resistive switching in SiN-based resistive switching memory

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiN_x/n⁺ Si and Ni/SiN_x/n⁺⁺ Si resistive-switching random access memory devices. The Ni/SiN_x/n⁺⁺ Si device's Si bottom electrode had a higher dopant concentration (As ion > 10¹⁹ cm^-3) than the Ni/SiN_x/n⁺ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 10¹⁸ cm^-3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode.