Abstract
The present work introduces the formation of a highly organized one dimensional Ga2O3 nanoporous architecture by anodization of Ga metal at - 10 C in a mixture of phosphoric acid and ethylene glycol. In addition to pure Ga2O3, we perform in situ Zn doping by alloying Ga with 1 at.% Zn. After zinc doping, the Ga2O3 nanoporous layers demonstrate promising properties for photo-induced hydrogen generation from water.
Original language | English |
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Pages (from-to) | 112-115 |
Number of pages | 4 |
Journal | Electrochemistry Communications |
Volume | 35 |
DOIs | |
State | Published - 2013 |
Keywords
- GaO
- Nanoporous structures
- Self-organization
- Water splitting
- Zn doping