Self-rectifying and forming-free resistive switching with Cu/BN/SiO₂/Pt bilayer device

Selector-free 3D vertical crossbar with low power consumption is necessary for developing high-density memory devices. Sneaking current in these devices is the prime factor for their degradation as they lose power, and there are glitches in data retrieval. In this article, we have successfully illustrated a forming free and self-rectifying cell in a chemically synthesized 2D memristive device based on hexagonal Boron Nitride (h-BN) material. The device performs well with a Rectification Ratio (RR) > 10² with SiO₂/BN bi-layer structure at ±1.3 V. The device performed over 20000 cycles at a pulse width of 10 μs. Also, the device endurance decays with a different pulse width of 100 μs and 1 ms. Schottky barrier formation and development of conductive filament of oxygen vacancies are the primary causes for the proposed device to show Rectifying Resistive Switching (RRS) and Bipolar Resistive Switching (BRS), respectively. The device also performs good stability with the temperature range from Room Temperature (RT) to 250 °C. The sneak path concern and thermal stability enable potential applications for neuromorphic computing and future memory technology.