TY - JOUR
T1 - Self-Rectifying Short-Term Memory Phenomena Through Integration of TiOx Oxygen Reservoir and Al2O3 Barrier Layers for Neuromorphic System
AU - Ji, Hyeonseung
AU - Kim, Sungjoon
AU - Kim, Sungjun
N1 - Publisher Copyright:
© 2024 Wiley-VCH GmbH.
PY - 2024
Y1 - 2024
N2 - In this study, a tri-layer Pt/Al/TiOx/HfOx/Al2O3/Pt memristor device is fabricated and analyze its electrical characteristics for reservoir computing and neuromorphic systems applications. This device incorporates an oxygen reservoir of a TiOx and a barrier layer of an Al2O3, enabling stable bipolar switching characteristics without the need for an electroforming process over 103 cycles. It also exhibits self-rectifying properties under a negative bias. Based on these characteristics, it is investigated essential synaptic functions such as long-term potentiation (LTP), long-term depression (LTD), paired-pulse facilitation (PPF), spike-rate-dependent plasticity (SRDP), spike-duration-dependent plasticity (SDDP), spike-number-dependent plasticity (SNDP), and spike-amplitude-dependent plasticity (SADP), to assess their suitability for neuromorphic applications that mimic biological synapses. Furthermore, utilizing the short-term memory characteristics of the device, reservoir computing (RC) measurement from [0000] to [1111] in 4-bit representation is conducted. This capability enables us to achieve a high accuracy of 95.5% in MNIST pattern recognition tasks. Lastly, the natural decay characteristics caused by oxygen ion migration in the device, examining the transition from short-term to long-term memory in image memorization tasks is explored. The potential for deployment in high-density crossbar arrays by calculating the read margin based on the device I–V curve and programming scheme is also evaluated.
AB - In this study, a tri-layer Pt/Al/TiOx/HfOx/Al2O3/Pt memristor device is fabricated and analyze its electrical characteristics for reservoir computing and neuromorphic systems applications. This device incorporates an oxygen reservoir of a TiOx and a barrier layer of an Al2O3, enabling stable bipolar switching characteristics without the need for an electroforming process over 103 cycles. It also exhibits self-rectifying properties under a negative bias. Based on these characteristics, it is investigated essential synaptic functions such as long-term potentiation (LTP), long-term depression (LTD), paired-pulse facilitation (PPF), spike-rate-dependent plasticity (SRDP), spike-duration-dependent plasticity (SDDP), spike-number-dependent plasticity (SNDP), and spike-amplitude-dependent plasticity (SADP), to assess their suitability for neuromorphic applications that mimic biological synapses. Furthermore, utilizing the short-term memory characteristics of the device, reservoir computing (RC) measurement from [0000] to [1111] in 4-bit representation is conducted. This capability enables us to achieve a high accuracy of 95.5% in MNIST pattern recognition tasks. Lastly, the natural decay characteristics caused by oxygen ion migration in the device, examining the transition from short-term to long-term memory in image memorization tasks is explored. The potential for deployment in high-density crossbar arrays by calculating the read margin based on the device I–V curve and programming scheme is also evaluated.
KW - image memorization
KW - neuromorphic device
KW - reservoir computing
KW - RRAM
KW - short-term memory
UR - http://www.scopus.com/inward/record.url?scp=85203636742&partnerID=8YFLogxK
U2 - 10.1002/admt.202400895
DO - 10.1002/admt.202400895
M3 - Article
AN - SCOPUS:85203636742
SN - 2365-709X
JO - Advanced Materials Technologies
JF - Advanced Materials Technologies
ER -