Semiconducting behavior of niobium-doped titanium oxide in the amorphous state

Kyung Chul Ok, Joseph Park, Ju Ho Lee, Byung Du Ahn, Je Hun Lee, Kwun Bum Chung, Jin Seong Park

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Electrical properties of Nb-doped titanium oxide films were evaluated with respect to annealing temperatures. Although an amorphous phase is preserved up to 450°C, x-ray absorption spectroscopy analyses indicate that crystal field splitting in the conduction band begins to take place at this temperature. Such molecular orbital ordering effects induce a semiconducting behavior, which is manifested by working thin film transistor devices with field effect mobility values as high as 0.64 cm 2/Vs. X-ray photoelectron spectroscopy studies disclose a drastic increase in Nb +5 states upon heat treatment, and these may be attributed to oxygen deficient states that generate free electrons.

Original languageEnglish
Article number142103
JournalApplied Physics Letters
Volume100
Issue number14
DOIs
StatePublished - 2 Apr 2012

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