Abstract
Electrical properties of Nb-doped titanium oxide films were evaluated with respect to annealing temperatures. Although an amorphous phase is preserved up to 450°C, x-ray absorption spectroscopy analyses indicate that crystal field splitting in the conduction band begins to take place at this temperature. Such molecular orbital ordering effects induce a semiconducting behavior, which is manifested by working thin film transistor devices with field effect mobility values as high as 0.64 cm 2/Vs. X-ray photoelectron spectroscopy studies disclose a drastic increase in Nb +5 states upon heat treatment, and these may be attributed to oxygen deficient states that generate free electrons.
Original language | English |
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Article number | 142103 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 14 |
DOIs | |
State | Published - 2 Apr 2012 |