TY - JOUR
T1 - Sequential Co-Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near-Infrared Photodetectors
AU - Xia, Pan
AU - Sun, Bin
AU - Biondi, Margherita
AU - Xu, Jian
AU - Atan, Ozan
AU - Imran, Muhammad
AU - Hassan, Yasser
AU - Liu, Yanjiang
AU - Pina, Joao M.
AU - Najarian, Amin Morteza
AU - Grater, Luke
AU - Bertens, Koen
AU - Sagar, Laxmi Kishore
AU - Anwar, Husna
AU - Choi, Min Jae
AU - Zhang, Yangning
AU - Hasham, Minhal
AU - García de Arquer, F. Pelayo
AU - Hoogland, Sjoerd
AU - Wilson, Mark W.B.
AU - Sargent, Edward H.
N1 - Publisher Copyright:
© 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH.
PY - 2023/7/13
Y1 - 2023/7/13
N2 - III-V colloidal quantum dots (CQDs) are promising materials for optoelectronic applications, for they avoid heavy metals while achieving absorption spanning the visible to the infrared (IR). However, the covalent nature of III-V CQDs requires the development of new passivation strategies to fabricate conductive CQD solids for optoelectronics: this work shows herein that ligand exchanges, previously developed in II-VI and IV-VI quantum dots and employing a single ligand, do not fully passivate CQDs, and that this curtails device efficiency. Guided by density functional theory (DFT) simulations, this work develops a co-passivation strategy to fabricate indium arsenide CQD photodetectors, an approach that employs the combination of X-type methyl ammonium acetate (MaAc) and Z-type ligands InBr3. This approach maintains charge carrier mobility and improves passivation, seen in a 25% decrease in Stokes shift, a fourfold reduction in the rate of first-exciton absorption linewidth broadening over time-under-stress, and leads to a doubling in photoluminescence (PL) lifetime. The resulting devices show 37% external quantum efficiency (EQE) at 950 nm, the highest value reported for InAs CQD photodetectors.
AB - III-V colloidal quantum dots (CQDs) are promising materials for optoelectronic applications, for they avoid heavy metals while achieving absorption spanning the visible to the infrared (IR). However, the covalent nature of III-V CQDs requires the development of new passivation strategies to fabricate conductive CQD solids for optoelectronics: this work shows herein that ligand exchanges, previously developed in II-VI and IV-VI quantum dots and employing a single ligand, do not fully passivate CQDs, and that this curtails device efficiency. Guided by density functional theory (DFT) simulations, this work develops a co-passivation strategy to fabricate indium arsenide CQD photodetectors, an approach that employs the combination of X-type methyl ammonium acetate (MaAc) and Z-type ligands InBr3. This approach maintains charge carrier mobility and improves passivation, seen in a 25% decrease in Stokes shift, a fourfold reduction in the rate of first-exciton absorption linewidth broadening over time-under-stress, and leads to a doubling in photoluminescence (PL) lifetime. The resulting devices show 37% external quantum efficiency (EQE) at 950 nm, the highest value reported for InAs CQD photodetectors.
KW - III-V compound semiconductors
KW - indium arsenide
KW - near-infrared photodetectors
UR - http://www.scopus.com/inward/record.url?scp=85160279870&partnerID=8YFLogxK
U2 - 10.1002/adma.202301842
DO - 10.1002/adma.202301842
M3 - Article
C2 - 37170473
AN - SCOPUS:85160279870
SN - 0935-9648
VL - 35
JO - Advanced Materials
JF - Advanced Materials
IS - 28
M1 - 2301842
ER -