Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

Hyun Wook Shin; Sang Jun Lee; Doo Gun Kim; Myung Ho Bae; Jaeyeong Heo; Kyoung Jin Choi; Won Jun Choi; Jeong Woo Choe; Jae Cheol Shin

doi:10.1038/srep10764

Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

Hyun Wook Shin, Sang Jun Lee, Doo Gun Kim, Myung Ho Bae, Jaeyeong Heo, Kyoung Jin Choi, Won Jun Choi, Jeong Woo Choe, Jae Cheol Shin

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 10⁸ cm·Hz^1/2/W for the SWIR band at 77^K and operates at temperatures as high as 220^K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.

Original language	English
Article number	10764
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep10764
State	Published - 2 Jun 2015

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title = "Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays",

abstract = "One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 108 cm·Hz1/2/W for the SWIR band at 77K and operates at temperatures as high as 220K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.",

author = "{Wook Shin}, Hyun and Lee, {Sang Jun} and Kim, {Doo Gun} and Bae, {Myung Ho} and Jaeyeong Heo and Choi, {Kyoung Jin} and Choi, {Won Jun} and Choe, {Jeong Woo} and Shin, {Jae Cheol}",

note = "Publisher Copyright: {\textcopyright} 2015 Macmillan Publishers Limited.",

year = "2015",

month = jun,

day = "2",

doi = "10.1038/srep10764",

language = "English",

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journal = "Scientific Reports",

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T1 - Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

AU - Wook Shin, Hyun

AU - Lee, Sang Jun

AU - Kim, Doo Gun

AU - Bae, Myung Ho

AU - Heo, Jaeyeong

AU - Choi, Kyoung Jin

AU - Choi, Won Jun

AU - Choe, Jeong Woo

AU - Shin, Jae Cheol

PY - 2015/6/2

Y1 - 2015/6/2

N2 - One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 108 cm·Hz1/2/W for the SWIR band at 77K and operates at temperatures as high as 220K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.

AB - One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 108 cm·Hz1/2/W for the SWIR band at 77K and operates at temperatures as high as 220K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.

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VL - 5

JO - Scientific Reports

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ER -

Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

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