Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

Hyun Wook Shin; Sang Jun Lee; Doo Gun Kim; Myung Ho Bae; Jaeyeong Heo; Kyoung Jin Choi; Won Jun Choi; Jeong Woo Choe; Jae Cheol Shin

doi:10.1038/srep10764

Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

Hyun Wook Shin
, Sang Jun Lee
, Doo Gun Kim
, Myung Ho Bae
, Jaeyeong Heo
, Kyoung Jin Choi
, Won Jun Choi
, Jeong Woo Choe
, Jae Cheol Shin

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 10⁸ cm·Hz^1/2/W for the SWIR band at 77^K and operates at temperatures as high as 220^K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.

Original language	English
Article number	10764
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep10764
State	Published - 2 Jun 2015

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title = "Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays",

abstract = "One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 108 cm·Hz1/2/W for the SWIR band at 77K and operates at temperatures as high as 220K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.",

author = "\{Wook Shin\}, Hyun and Lee, \{Sang Jun\} and Kim, \{Doo Gun\} and Bae, \{Myung Ho\} and Jaeyeong Heo and Choi, \{Kyoung Jin\} and Choi, \{Won Jun\} and Choe, \{Jeong Woo\} and Shin, \{Jae Cheol\}",

note = "Publisher Copyright: {\textcopyright} 2015 Macmillan Publishers Limited.",

year = "2015",

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day = "2",

doi = "10.1038/srep10764",

language = "English",

volume = "5",

journal = "Scientific Reports",

issn = "2045-2322",

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T1 - Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

AU - Wook Shin, Hyun

AU - Lee, Sang Jun

AU - Kim, Doo Gun

AU - Bae, Myung Ho

AU - Heo, Jaeyeong

AU - Choi, Kyoung Jin

AU - Choi, Won Jun

AU - Choe, Jeong Woo

AU - Shin, Jae Cheol

PY - 2015/6/2

Y1 - 2015/6/2

N2 - One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 108 cm·Hz1/2/W for the SWIR band at 77K and operates at temperatures as high as 220K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.

AB - One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 108 cm·Hz1/2/W for the SWIR band at 77K and operates at temperatures as high as 220K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.

UR - https://www.scopus.com/pages/publications/84934881091

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DO - 10.1038/srep10764

M3 - Article

AN - SCOPUS:84934881091

SN - 2045-2322

VL - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 10764

ER -

Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

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