Abstract
In xGa 1-xAs/In 0.52Al 0.48As metamorphic high electron mobility transistors (MHEMTs) on GaAs wafers have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for the millimeter-wave applications. In this article, we present the DC and the millimeter-wave characteristics of MHEMTs using In xGa 1-xAs/In 0.52Al 0.48As (0.4 ≤ x ≤ 0.7) modulation-doped heterostructures on GaAs substrates through accurate calibration of the device performance. We have obtained a good calibration agreement for a device fabricated with a 0.1-μm offset Λ-shaped gate In 0.52Ga 0.47As/In 0.52Al 0.48As/GaAs MHEMT by using the hydrodynamic transport model of a commercial device simulator. The electrical and the millimeter-wave performances of the devices have been investigated by varying the indium mole fraction from 0.4 to 0.7 in the channel layer. The DC and millimeter-wave characteristics are better and exhibit increase almost linearly with increasing the indium mole fraction if breakdown does not limit the device performance. In addition, our newly designed device with an x = 0.65 indium mole fraction for better millimeter-wave performance shows about 10% enhancement in the DC and millimeter-wave characteristics and has almost the same breakdown characteristic as that of the device with an x = 0.53 indium mole fraction.
Original language | English |
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Pages (from-to) | 408-417 |
Number of pages | 10 |
Journal | Journal of the Korean Physical Society |
Volume | 44 |
Issue number | 2 |
State | Published - Feb 2004 |
Keywords
- Cut-off frequency
- GaAs based HEMT
- InAlAs
- InGaAs
- Maximum frequency of oscillation
- Metamorphic HEMT (MHEMT)
- Millimeter-wave frequency
- Transconductance