TY - JOUR
T1 - SiN-based optoelectronic synaptic devices
T2 - enhancing future cognitive computing systems
AU - Park, Hyogeun
AU - Kim, Sungjun
N1 - Publisher Copyright:
© 2024 The Royal Society of Chemistry.
PY - 2024/9/11
Y1 - 2024/9/11
N2 - In this study, an optoelectronic synaptic device based on an indium tin oxide/SiN/TaN structure was fabricated for bio-inspired computing. Under light exposure, the device exhibits excitatory postsynaptic current, which affords various synaptic functionalities. This device mimics the paired-pulse facilitation characteristics of short-term memory and the five essential functions of a human nociceptor: threshold, relaxation, no-adaptation, hyperalgesia, and allodynia. Additionally, it demonstrates heterosynaptic associative long-term potentiation between two inputs and emulates associative learning behavior based on Pavlov's conditioning experiment. These results demonstrate the potential of SiN-based devices as optoelectronic synapses for cognitive learning.
AB - In this study, an optoelectronic synaptic device based on an indium tin oxide/SiN/TaN structure was fabricated for bio-inspired computing. Under light exposure, the device exhibits excitatory postsynaptic current, which affords various synaptic functionalities. This device mimics the paired-pulse facilitation characteristics of short-term memory and the five essential functions of a human nociceptor: threshold, relaxation, no-adaptation, hyperalgesia, and allodynia. Additionally, it demonstrates heterosynaptic associative long-term potentiation between two inputs and emulates associative learning behavior based on Pavlov's conditioning experiment. These results demonstrate the potential of SiN-based devices as optoelectronic synapses for cognitive learning.
UR - http://www.scopus.com/inward/record.url?scp=85204224337&partnerID=8YFLogxK
U2 - 10.1039/d4tc02992e
DO - 10.1039/d4tc02992e
M3 - Article
AN - SCOPUS:85204224337
SN - 2050-7526
VL - 12
SP - 16551
EP - 16559
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 40
ER -