TY - JOUR
T1 - Single flake homo p-n diode of MoTe2 enabled by oxygen plasma doping
AU - Zulfiqar, Irsa
AU - Gul, Sania
AU - Sohail, Hafiz Aamir
AU - Rabani, Iqra
AU - Gul, Saima
AU - Rehman, Malik Abdul
AU - Wabaidur, Saikh Mohammad
AU - Yasir, Muhammad
AU - Ullah, Inam
AU - Khan, Muhammad Asghar
AU - Rehman, Shania
AU - Khan, Muhammad Farooq
N1 - Publisher Copyright:
© 2024 Walter de Gruyter GmbH. All rights reserved.
PY - 2024/1/1
Y1 - 2024/1/1
N2 - Two-dimensional (2D) materials play a crucial role as fundamental electrical components in modern electronics and optoelectronics next-generation artificial intelligent devices. This study presents a methodology for creating a laterally uniform p-n junction by using a partial oxygen plasma-mediated strategy to introduce p-type doping in single channel MoTe2device. The MoTe2field effect transistors (FETs) show high electron mobility of about ~23.54 cm2V-1s-1and a current ON/OFF ratio of ~106 while p-type FETs show hole mobility of about ~9.25 cm2V-1s-1and current ON/OFF ratio ~105along with artificially created lateral MoTe2 p-n junction, exhibited a rectification ratio of ~102and ideality factor of ~1.7 which is proximity to ideal-like diode. Thus, our study showed a diversity in the development of low-power nanoelectronics of next-generation integrated circuits.
AB - Two-dimensional (2D) materials play a crucial role as fundamental electrical components in modern electronics and optoelectronics next-generation artificial intelligent devices. This study presents a methodology for creating a laterally uniform p-n junction by using a partial oxygen plasma-mediated strategy to introduce p-type doping in single channel MoTe2device. The MoTe2field effect transistors (FETs) show high electron mobility of about ~23.54 cm2V-1s-1and a current ON/OFF ratio of ~106 while p-type FETs show hole mobility of about ~9.25 cm2V-1s-1and current ON/OFF ratio ~105along with artificially created lateral MoTe2 p-n junction, exhibited a rectification ratio of ~102and ideality factor of ~1.7 which is proximity to ideal-like diode. Thus, our study showed a diversity in the development of low-power nanoelectronics of next-generation integrated circuits.
KW - field effect transistor
KW - MoTehomojunction diode
KW - TMDs
UR - http://www.scopus.com/inward/record.url?scp=85185720739&partnerID=8YFLogxK
U2 - 10.1515/ntrev-2023-0207
DO - 10.1515/ntrev-2023-0207
M3 - Article
AN - SCOPUS:85185720739
SN - 2191-9089
VL - 13
JO - Nanotechnology Reviews
JF - Nanotechnology Reviews
IS - 1
M1 - 20230207
ER -