Single flake homo p-n diode of MoTe2 enabled by oxygen plasma doping

Two-dimensional (2D) materials play a crucial role as fundamental electrical components in modern electronics and optoelectronics next-generation artificial intelligent devices. This study presents a methodology for creating a laterally uniform p-n junction by using a partial oxygen plasma-mediated strategy to introduce p-type doping in single channel MoTe₂device. The MoTe₂field effect transistors (FETs) show high electron mobility of about ~23.54 cm²V^-1s^-1and a current ON/OFF ratio of ~106 while p-type FETs show hole mobility of about ~9.25 cm²V^-1s^-1and current ON/OFF ratio ~10⁵along with artificially created lateral MoTe2 p-n junction, exhibited a rectification ratio of ~10²and ideality factor of ~1.7 which is proximity to ideal-like diode. Thus, our study showed a diversity in the development of low-power nanoelectronics of next-generation integrated circuits.