SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory

Chandreswar Mahata; Min Hwi Kim; Suhyun Bang; Tae Hyeon Kim; Dong Keun Lee; Yeon Joon Choi; Sungjun Kim; Byung Gook Park

doi:10.1063/1.5085853

SiO₂ layer effect on atomic layer deposition Al₂O₃-based resistive switching memory

Chandreswar Mahata, Min Hwi Kim, Suhyun Bang, Tae Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Sungjun Kim, Byung Gook Park

Department of Electronics & Electrical Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In this letter, we demonstrated improved resistive switching (RS) characteristics for a complementary metal-oxide-semiconductor compatible Ni/Ti/Al₂O₃/SiO₂/Si device structure. The robust SiO₂ layer deposited by the additional low-pressure chemical vapor deposition process can improve the RS characteristics such as the endurance cycle, current level, and on/off ratio. Moreover, the multilevel capability is enhanced in the bilayer structure; the larger the reset stop voltage, the greater the on/off ratio demonstrated. Furthermore, for practical RS operation, several resistance states were obtained by adjusting the pulse amplitude. This property is desirable for highly integrated nonvolatile memory applications.

Original language	English
Article number	182102
Journal	Applied Physics Letters
Volume	114
Issue number	18
DOIs	https://doi.org/10.1063/1.5085853
State	Published - 6 May 2019

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title = "SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory",

abstract = "In this letter, we demonstrated improved resistive switching (RS) characteristics for a complementary metal-oxide-semiconductor compatible Ni/Ti/Al2O3/SiO2/Si device structure. The robust SiO2 layer deposited by the additional low-pressure chemical vapor deposition process can improve the RS characteristics such as the endurance cycle, current level, and on/off ratio. Moreover, the multilevel capability is enhanced in the bilayer structure; the larger the reset stop voltage, the greater the on/off ratio demonstrated. Furthermore, for practical RS operation, several resistance states were obtained by adjusting the pulse amplitude. This property is desirable for highly integrated nonvolatile memory applications.",

author = "Chandreswar Mahata and Kim, {Min Hwi} and Suhyun Bang and Kim, {Tae Hyeon} and Lee, {Dong Keun} and Choi, {Yeon Joon} and Sungjun Kim and Park, {Byung Gook}",

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T1 - SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory

AU - Mahata, Chandreswar

AU - Kim, Min Hwi

AU - Bang, Suhyun

AU - Kim, Tae Hyeon

AU - Lee, Dong Keun

AU - Choi, Yeon Joon

AU - Kim, Sungjun

AU - Park, Byung Gook

PY - 2019/5/6

Y1 - 2019/5/6

N2 - In this letter, we demonstrated improved resistive switching (RS) characteristics for a complementary metal-oxide-semiconductor compatible Ni/Ti/Al2O3/SiO2/Si device structure. The robust SiO2 layer deposited by the additional low-pressure chemical vapor deposition process can improve the RS characteristics such as the endurance cycle, current level, and on/off ratio. Moreover, the multilevel capability is enhanced in the bilayer structure; the larger the reset stop voltage, the greater the on/off ratio demonstrated. Furthermore, for practical RS operation, several resistance states were obtained by adjusting the pulse amplitude. This property is desirable for highly integrated nonvolatile memory applications.

AB - In this letter, we demonstrated improved resistive switching (RS) characteristics for a complementary metal-oxide-semiconductor compatible Ni/Ti/Al2O3/SiO2/Si device structure. The robust SiO2 layer deposited by the additional low-pressure chemical vapor deposition process can improve the RS characteristics such as the endurance cycle, current level, and on/off ratio. Moreover, the multilevel capability is enhanced in the bilayer structure; the larger the reset stop voltage, the greater the on/off ratio demonstrated. Furthermore, for practical RS operation, several resistance states were obtained by adjusting the pulse amplitude. This property is desirable for highly integrated nonvolatile memory applications.

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VL - 114

JO - Applied Physics Letters

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ER -

SiO₂ layer effect on atomic layer deposition Al₂O₃-based resistive switching memory

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