Small-signal analysis of high maximum frequency of oscillation 0.1-μm off-set gamma-shaped gate InGaAs/InAlAs/GaAs metamorphic high-electron-mobility transistors

Bok Hyung Lee, Sam Dong Kim, Jin Koo Rhee

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We examined the effects of gate recess process conditions on the electrical characteristics of 0.1-μm-gate-length metamorphic high-electron-mobility transistors (MHEMTs) by the comparative analysis of small-signal parameters. When the wide-gate-recess method is adopted, significant reductions in gate-to-drain conductance and gate-to-drain capacitance were obtained compared with those obtained by the of narrow-gate-recess method. These differences in small-signal parameters are due to the removal of the entire n+ cap layer and corresponding dissimilarity in gate structure when the wide-gate-recess method is used. The wide-gate-recess method produced ∼1/2 drain-source saturation current and extrinsic transconductance compared with the narrow-gate-recess method. In contract to the DC performances, a markedly enhanced S21 gain of 3.5 dB and an fmax of 447 GHz were obtained from the MHEMTs processed by the wide-gate-recess method. This high fmax is responsible for the proper selection of the gate recess method for what and is one of the best data thus far reported for 0.1-μm-gate-length MHEMTs.

Original languageEnglish
Pages (from-to)1914-1918
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
StatePublished - Apr 2004

Keywords

  • Gamma-shaped-gate
  • Maximum frequency of oscillation
  • MHEMTs
  • Narrow-gate-recess-method
  • Wide-gate-recess-method

Fingerprint

Dive into the research topics of 'Small-signal analysis of high maximum frequency of oscillation 0.1-μm off-set gamma-shaped gate InGaAs/InAlAs/GaAs metamorphic high-electron-mobility transistors'. Together they form a unique fingerprint.

Cite this