Solvent-mediated threshold voltage shift in solution-processed transparent oxide thin-film transistors

Yong Hoon Kim, Hyun Soo Kim, Jeong In Han, Sung Kyu Park

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

We investigated solvent-mediated threshold voltage (VTH) shift in solution-processed zinc-tin oxide (ZTO) thin film transistors (TFTs). The ZTO TFTs showed negative VTH shift when exposed to various organic solvents such as hexane, isopropanol, and chlorobenzene. Additionally the magnitude of the shift showed a close relationship with the dielectric constant or electronegativity of the solvent molecules. From the experiments, one of the origins of the VTH shift in the transparent oxide TFTs appears to be closely correlated with the dipole interaction of the solvent molecules and ZTO back channel surface.

Original languageEnglish
Article number092105
JournalApplied Physics Letters
Volume97
Issue number9
DOIs
StatePublished - 30 Aug 2010

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