Spectroscopic detection of (i) intrinsic band edge defects, and (ii) transition metal (TM) and rare earth lanthanide (REL) atom occupied states in elemental and complex oxides: A novel pathway to (i) device reliability and (ii) increased functionality in ULSI CMOS

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Abstract

A novel application of synchrotron soft-X-ray spectroscopy is applied to (i) the detection of intrinsic bonding defects, and (ii) partially occupied TM and REL atom valence band edge dand d- and f-states. Spectroscopic identification and correlation with electrical performance is crucial for the identification and optimization of TM/REL elemental and complex oxides for advanced ULSI devices.

Original languageEnglish
Title of host publicationProceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Pages95-98
Number of pages4
DOIs
StatePublished - 2009
Event10th International Conference on ULtimate Integration of Silicon, ULIS 2009 - Aachen, Germany
Duration: 18 Mar 200920 Mar 2009

Publication series

NameProceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Conference

Conference10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Country/TerritoryGermany
CityAachen
Period18/03/0920/03/09

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