Spectroscopic ellipsometric properties of Ga1-x FexAs dilute magnetic semiconductors

Hosun Lee; T. D. Kang; Y. J. Park; H. T. Oh; H. Y. Cho; R. Moriya; H. Munekata

Spectroscopic ellipsometric properties of Ga_1-x Fe_xAs dilute magnetic semiconductors

Hosun Lee, T. D. Kang, Y. J. Park, H. T. Oh, H. Y. Cho, R. Moriya, H. Munekata

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

We report pseudodielectric function data 〈 ε 〉 = 〈 ε₁ 〉 + i 〈 ε₂ 〉 of Ga_1-x Fe_xAs semiconductors grown on GaAs substrates. The data were obtained from 1.5 to 6 eV using spectroscopic ellipsometry. Critical point (CP) parameters were obtained by fitting model lineshapes to numerically calculated second energy derivatives of 〈 ε 〉. The bandgap energies of E₁, E₁ + Δ₁, E₀', and E₂ were determined. We observed an increase of the E₁ and E₁ + Δ₁ gap energy similar to that of ZnFe_xSe_1-x. The linewidth of CPs increased with increasing Fe compositions. The band gap energy shifts were mainly attributed to the alloying effect because the strain effect on the band gap energies was negligible. We also discuss the band gap shift in terms of an sp-d hybridization model.

Original language	English
Pages (from-to)	S441-S445
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
State	Published - Feb 2003
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002

Keywords

Band structure
Critical point
Dielectric function
Dilute magnetic semiconductor
Ellipsometry

Cite this

@article{bb2b0641611542a98b3e6fc5bae9b1aa,

title = "Spectroscopic ellipsometric properties of Ga1-x FexAs dilute magnetic semiconductors",

abstract = "We report pseudodielectric function data 〈 ε 〉 = 〈 ε1 〉 + i 〈 ε2 〉 of Ga1-x FexAs semiconductors grown on GaAs substrates. The data were obtained from 1.5 to 6 eV using spectroscopic ellipsometry. Critical point (CP) parameters were obtained by fitting model lineshapes to numerically calculated second energy derivatives of 〈 ε 〉. The bandgap energies of E1, E1 + Δ1, E0', and E2 were determined. We observed an increase of the E1 and E1 + Δ1 gap energy similar to that of ZnFexSe1-x. The linewidth of CPs increased with increasing Fe compositions. The band gap energy shifts were mainly attributed to the alloying effect because the strain effect on the band gap energies was negligible. We also discuss the band gap shift in terms of an sp-d hybridization model.",

keywords = "Band structure, Critical point, Dielectric function, Dilute magnetic semiconductor, Ellipsometry",

author = "Hosun Lee and Kang, {T. D.} and Park, {Y. J.} and Oh, {H. T.} and Cho, {H. Y.} and R. Moriya and H. Munekata",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S441--S445",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

note = "Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

}

TY - JOUR

T1 - Spectroscopic ellipsometric properties of Ga1-x FexAs dilute magnetic semiconductors

AU - Lee, Hosun

AU - Kang, T. D.

AU - Park, Y. J.

AU - Oh, H. T.

AU - Cho, H. Y.

AU - Moriya, R.

AU - Munekata, H.

PY - 2003/2

Y1 - 2003/2

N2 - We report pseudodielectric function data 〈 ε 〉 = 〈 ε1 〉 + i 〈 ε2 〉 of Ga1-x FexAs semiconductors grown on GaAs substrates. The data were obtained from 1.5 to 6 eV using spectroscopic ellipsometry. Critical point (CP) parameters were obtained by fitting model lineshapes to numerically calculated second energy derivatives of 〈 ε 〉. The bandgap energies of E1, E1 + Δ1, E0', and E2 were determined. We observed an increase of the E1 and E1 + Δ1 gap energy similar to that of ZnFexSe1-x. The linewidth of CPs increased with increasing Fe compositions. The band gap energy shifts were mainly attributed to the alloying effect because the strain effect on the band gap energies was negligible. We also discuss the band gap shift in terms of an sp-d hybridization model.

AB - We report pseudodielectric function data 〈 ε 〉 = 〈 ε1 〉 + i 〈 ε2 〉 of Ga1-x FexAs semiconductors grown on GaAs substrates. The data were obtained from 1.5 to 6 eV using spectroscopic ellipsometry. Critical point (CP) parameters were obtained by fitting model lineshapes to numerically calculated second energy derivatives of 〈 ε 〉. The bandgap energies of E1, E1 + Δ1, E0', and E2 were determined. We observed an increase of the E1 and E1 + Δ1 gap energy similar to that of ZnFexSe1-x. The linewidth of CPs increased with increasing Fe compositions. The band gap energy shifts were mainly attributed to the alloying effect because the strain effect on the band gap energies was negligible. We also discuss the band gap shift in terms of an sp-d hybridization model.

KW - Band structure

KW - Critical point

KW - Dielectric function

KW - Dilute magnetic semiconductor

KW - Ellipsometry

UR - http://www.scopus.com/inward/record.url?scp=0037307050&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0037307050

SN - 0374-4884

VL - 42

SP - S441-S445

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

Spectroscopic ellipsometric properties of Ga_1-x Fe_xAs dilute magnetic semiconductors

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Keywords

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