Sputter-deposited La 2O 3 on p-GaAs for gate dielectric applications

T. Das; C. Mahata; C. K. Maiti; G. K. Dalapati; C. K. Chia; D. Z. Chi; S. Y. Chiam; H. L. Seng; C. C. Tan; H. K. Hui; G. Sutradhar; P. K. Bose

doi:10.1149/2.072202jes

Sputter-deposited La ₂O ₃ on p-GaAs for gate dielectric applications

T. Das, C. Mahata, C. K. Maiti, G. K. Dalapati, C. K. Chia, D. Z. Chi, S. Y. Chiam, H. L. Seng, C. C. Tan, H. K. Hui, G. Sutradhar, P. K. Bose

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The interfacial and electrical properties of RF sputtered La ₂O ₃ on p-GaAs substrates with and without ultrathin Si interface passivation layer (IPL) are reported. X-ray photoelectron spectroscopy (XPS) studies revealed the formation of thermally stable interfacial native oxide (Ga-oxide and As-oxide) for La ₂O ₃Sip-GaAs gate stacks. The presence of (La ₂O ₃) _1-x(SiO ₂) _x at the interface prevented the formation of La-hydroxide which improved the metal-oxide-semiconductor (MOS) device characteristics, such as interface state density (∼1.2 × 10 ¹²eV ^-1cm ^-2), frequency dispersion (∼7), and hysteresis voltage (∼260 mV). A gate leakage current density of 1.1 × 10 ^-5 A.cm ^-2 has been achieved at V _fb-1 V for an equivalent oxide thickness of 3.4 nm and small flat-band voltage instability under constant voltage stressing was observed. The electrical properties of AlLa ₂O ₃Sip-GaAs MOS capacitors were found to improve after post deposition annealing at 500°C.

Original language	English
Pages (from-to)	G15-G22
Journal	Journal of the Electrochemical Society
Volume	159
Issue number	2
DOIs	https://doi.org/10.1149/2.072202jes
State	Published - 2012

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/2.072202jes

Cite this

@article{a52252ddd7254625bfa8e01243412b05,

title = "Sputter-deposited La 2O 3 on p-GaAs for gate dielectric applications",

abstract = "The interfacial and electrical properties of RF sputtered La 2O 3 on p-GaAs substrates with and without ultrathin Si interface passivation layer (IPL) are reported. X-ray photoelectron spectroscopy (XPS) studies revealed the formation of thermally stable interfacial native oxide (Ga-oxide and As-oxide) for La 2O 3Sip-GaAs gate stacks. The presence of (La 2O 3) 1-x(SiO 2) x at the interface prevented the formation of La-hydroxide which improved the metal-oxide-semiconductor (MOS) device characteristics, such as interface state density (∼1.2 × 10 12eV -1cm -2), frequency dispersion (∼7), and hysteresis voltage (∼260 mV). A gate leakage current density of 1.1 × 10 -5 A.cm -2 has been achieved at V fb-1 V for an equivalent oxide thickness of 3.4 nm and small flat-band voltage instability under constant voltage stressing was observed. The electrical properties of AlLa 2O 3Sip-GaAs MOS capacitors were found to improve after post deposition annealing at 500°C.",

author = "T. Das and C. Mahata and Maiti, {C. K.} and Dalapati, {G. K.} and Chia, {C. K.} and Chi, {D. Z.} and Chiam, {S. Y.} and Seng, {H. L.} and Tan, {C. C.} and Hui, {H. K.} and G. Sutradhar and Bose, {P. K.}",

year = "2012",

doi = "10.1149/2.072202jes",

language = "English",

volume = "159",

pages = "G15--G22",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Sputter-deposited La 2O 3 on p-GaAs for gate dielectric applications

AU - Das, T.

AU - Mahata, C.

AU - Maiti, C. K.

AU - Dalapati, G. K.

AU - Chia, C. K.

AU - Chi, D. Z.

AU - Chiam, S. Y.

AU - Seng, H. L.

AU - Tan, C. C.

AU - Hui, H. K.

AU - Sutradhar, G.

AU - Bose, P. K.

PY - 2012

Y1 - 2012

N2 - The interfacial and electrical properties of RF sputtered La 2O 3 on p-GaAs substrates with and without ultrathin Si interface passivation layer (IPL) are reported. X-ray photoelectron spectroscopy (XPS) studies revealed the formation of thermally stable interfacial native oxide (Ga-oxide and As-oxide) for La 2O 3Sip-GaAs gate stacks. The presence of (La 2O 3) 1-x(SiO 2) x at the interface prevented the formation of La-hydroxide which improved the metal-oxide-semiconductor (MOS) device characteristics, such as interface state density (∼1.2 × 10 12eV -1cm -2), frequency dispersion (∼7), and hysteresis voltage (∼260 mV). A gate leakage current density of 1.1 × 10 -5 A.cm -2 has been achieved at V fb-1 V for an equivalent oxide thickness of 3.4 nm and small flat-band voltage instability under constant voltage stressing was observed. The electrical properties of AlLa 2O 3Sip-GaAs MOS capacitors were found to improve after post deposition annealing at 500°C.

AB - The interfacial and electrical properties of RF sputtered La 2O 3 on p-GaAs substrates with and without ultrathin Si interface passivation layer (IPL) are reported. X-ray photoelectron spectroscopy (XPS) studies revealed the formation of thermally stable interfacial native oxide (Ga-oxide and As-oxide) for La 2O 3Sip-GaAs gate stacks. The presence of (La 2O 3) 1-x(SiO 2) x at the interface prevented the formation of La-hydroxide which improved the metal-oxide-semiconductor (MOS) device characteristics, such as interface state density (∼1.2 × 10 12eV -1cm -2), frequency dispersion (∼7), and hysteresis voltage (∼260 mV). A gate leakage current density of 1.1 × 10 -5 A.cm -2 has been achieved at V fb-1 V for an equivalent oxide thickness of 3.4 nm and small flat-band voltage instability under constant voltage stressing was observed. The electrical properties of AlLa 2O 3Sip-GaAs MOS capacitors were found to improve after post deposition annealing at 500°C.

UR - http://www.scopus.com/inward/record.url?scp=84855328677&partnerID=8YFLogxK

U2 - 10.1149/2.072202jes

DO - 10.1149/2.072202jes

M3 - Article

AN - SCOPUS:84855328677

SN - 0013-4651

VL - 159

SP - G15-G22

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 2

ER -

Sputter-deposited La ₂O ₃ on p-GaAs for gate dielectric applications

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this