Abstract
We obtained the photoluminescence spectra for CdTe(111) grown on Si(100) tilted toward <011> 1°, 2°, 4°, and 8° by MBE before and after RTA(rapid thermal annealing). It is caused by the strain due to the lattice mismatch between CdTe epitaxial layer and the substrate that the shift of peaks from CdTe(111)/Si(100) epitaxial layer was observed comparing with that of bulk. We could guess the crystal structures of the CdTe(111) epitaxial layers from the strains calculated from the quantity of the shifts. We found that the crystal structure of CdTe changed from the cubic in bulk to the tetragonal in strained as-grown samples, and from the tetragonal to the trigonal after RTA. It is caused by the different strain type that the structures are different before and after RTA because the misfit for atomic distance is dependent on the direction between CdTe(111) and Si(100). We found that the inplain compressive strains change from asymmetry to symmetry about [111] direction in CdTe(111) epitaxial layer after RTA.
Original language | English |
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Pages (from-to) | 244-255 |
Number of pages | 12 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3287 |
DOIs | |
State | Published - 1998 |
Event | Photodetectors: Materials and Devices III - San Jose, CA, United States Duration: 28 Jan 1998 → 30 Jan 1998 |
Keywords
- Asymmetry
- CdTe(111)/Si(100)
- Different strain type
- Misfit atomic distance
- RTA
- Symmetry