Strained polycrystalline germanium by metal-induced layer exchange crystallization

Jinok Kim, Jung Woo Baek, Dong Ho Kang, Jin Hong Park

Research output: Contribution to journalArticlepeer-review

Abstract

Here, we experimentally investigated germanium (Ge) profiles and the characteristics of polycrystalline Ge films crystallized by the LE-MIC process on SiO2 wafer with two different structures of inverted aluminum (Al) and Ge layer (SiO2/Al/AlOx/-Ge and SiO2/Al/AlOx/-Ge) at various temperatures (350, 450, and 550 C) with secondary ion mass spectroscopy (SIMS), optical microscopy X-ray diffraction (XRD), and Raman spectroscopy measurements. Contrary to our expectation, the different structure of inverted Al and Ge layers did not impact the LE-MIC process and finished poly-Ge films. Alternatively, the condition of the processing temperature between 350 C and 450 C made a big impact on the poly-Ge film crystallized by LE-MIC. In addition, the LE-MIC process near 550 C is accompanied by the MIGM process originated in the liquid phase of Ge due to the lower Al–Ge eutectic temperature (Al–Ge alloy melting point 550 C); consequentially, We obtained a large-grain size tensile strained polycrystalline Ge film.

Original languageEnglish
Pages (from-to)7628-7631
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number10
DOIs
StatePublished - Oct 2017

Keywords

  • Germanium
  • LE-MIC
  • MIGM
  • Tensile Strain

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