Abstract
Here, we experimentally investigated germanium (Ge) profiles and the characteristics of polycrystalline Ge films crystallized by the LE-MIC process on SiO2 wafer with two different structures of inverted aluminum (Al) and Ge layer (SiO2/Al/AlOx/-Ge and SiO2/Al/AlOx/-Ge) at various temperatures (350, 450, and 550 C) with secondary ion mass spectroscopy (SIMS), optical microscopy X-ray diffraction (XRD), and Raman spectroscopy measurements. Contrary to our expectation, the different structure of inverted Al and Ge layers did not impact the LE-MIC process and finished poly-Ge films. Alternatively, the condition of the processing temperature between 350 C and 450 C made a big impact on the poly-Ge film crystallized by LE-MIC. In addition, the LE-MIC process near 550 C is accompanied by the MIGM process originated in the liquid phase of Ge due to the lower Al–Ge eutectic temperature (Al–Ge alloy melting point 550 C); consequentially, We obtained a large-grain size tensile strained polycrystalline Ge film.
Original language | English |
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Pages (from-to) | 7628-7631 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 17 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2017 |
Keywords
- Germanium
- LE-MIC
- MIGM
- Tensile Strain