@inproceedings{0a20764152d644c9b730e4f881ab3cd7,
title = "Stress-induced degradation in strain-engineered nMOSFETs",
abstract = "Effects of electrical stress on DC performance of strain-engineered nMOSFETs are investigated using simulation. The applicability of technology CAD (TCAD) for the prediction of MOSFET reliability is demonstrated.",
author = "Maiti, {T. K.} and Mahato, {S. S.} and Bera, {M. K.} and M. Sengupta and P. Chakraborty and C. Mahata and A. Chakraborty and Maiti, {C. K.}",
year = "2008",
doi = "10.1109/IPFA.2008.4588185",
language = "English",
isbn = "1424420393",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
booktitle = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
note = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA ; Conference date: 07-07-2008 Through 11-07-2008",
}