Stress-induced degradation in strain-engineered nMOSFETs

T. K. Maiti, S. S. Mahato, M. K. Bera, M. Sengupta, P. Chakraborty, C. Mahata, A. Chakraborty, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Effects of electrical stress on DC performance of strain-engineered nMOSFETs are investigated using simulation. The applicability of technology CAD (TCAD) for the prediction of MOSFET reliability is demonstrated.

Original languageEnglish
Title of host publication2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs
StatePublished - 2008
Event2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore
Duration: 7 Jul 200811 Jul 2008

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Country/TerritorySingapore
CitySingapore
Period7/07/0811/07/08

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