Skip to main navigation Skip to search Skip to main content

Stress-induced voiding in sputtered TiSix complementary metal oxide silicon gate electrodes

  • Sam Dong Kim

Research output: Contribution to journalArticlepeer-review

Fingerprint

Dive into the research topics of 'Stress-induced voiding in sputtered TiSix complementary metal oxide silicon gate electrodes'. Together they form a unique fingerprint.
Sort by

Material Science

Engineering

Earth and Planetary Sciences