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Stress-induced voiding in sputtered TiSi
x
complementary metal oxide silicon gate electrodes
Sam Dong Kim
Department of Electronics & Electrical Engineering
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peer-review
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Dive into the research topics of 'Stress-induced voiding in sputtered TiSi
x
complementary metal oxide silicon gate electrodes'. Together they form a unique fingerprint.
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Material Science
Metal Oxide
100%
Silicon
100%
Thermal Stability
100%
Film
66%
Scanning Electron Microscopy
33%
Density
33%
Annealing
33%
Electronic Circuit
33%
Linewidth
33%
Thermal Degradation
33%
Engineering
Induced Stress
100%
Silicon Oxide
100%
Shallow Trench Isolation
100%
Polysilicon
57%
Internals
14%
Process Variable
14%
Molar Ratio
14%
Thermal Degradation
14%
Integrated Circuit
14%
Void Growth
14%
Sheet Resistance
14%
Earth and Planetary Sciences
Metal Oxide
100%
Trench
100%
Thermal Stability
42%
Integrated Circuit
14%
Scanning Electron Microscopy
14%
Pyrolysis
14%