Strong dependence of tunneling transport properties on overdriving voltage for room-temperature-operating single electron/hole transistors formed with ultranarrow [100] silicon nanowire channel

Sejoon Lee, Toshiro Hiramoto

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The single electron/hole transistor (SET/SHT) consisting of a Si nanowire channel with a self-assembled Si quantum dot showed a strong dependence of Coulomb blockade (CB) characteristics on the overdriving voltage (Vover). The SET/SHT requiring a low Vover due to the moderate dot size compared to the nanowire size showed good device performances, for example, very sharp CB oscillation and long extension of blockade regime. However, the SET/SHT requiring a high Vover due to the unduly shrunken of size, which leads to an increase in the valence band offset between the dot and the nanowire, showed the drastic degradation of the device performances.

Original languageEnglish
Article number043508
JournalApplied Physics Letters
Volume93
Issue number4
DOIs
StatePublished - 2008

Fingerprint

Dive into the research topics of 'Strong dependence of tunneling transport properties on overdriving voltage for room-temperature-operating single electron/hole transistors formed with ultranarrow [100] silicon nanowire channel'. Together they form a unique fingerprint.

Cite this