Abstract
We report the crystal growth of the InxGa1-xAs nanowires (NWs) on SiO2 substrate using metal organic chemical vapor deposition. Au nanoparticles which are disintegrated from thin Au film have been used as a catalyst for the vapor-liquid-solid growth. Electron microscopy characterization is performed to investigate the structural properties of the InxGa1-xAs NW. The InxGa1-xAs NW grown under an optimal condition has a single-crystal wurtzite structure without any misfit dislocation or stacking fault. Strong room temperature photoluminescence peaks are observed from InxGa1-xAs NWs passivated by GaAs. Very low light reflectance is measured at the NW surface in the wavelength range from 250 to 1200 nm. The single crystal In xGa1-xAs NWs are applicable to the various electrical and optical devices.
Original language | English |
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Pages (from-to) | 6297-6300 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 14 |
Issue number | 8 |
DOIs | |
State | Published - Aug 2014 |
Keywords
- MOCVD
- Nanowires
- Vapor-liquid-solid