Structural and optical properties of the InxGa1.xAs nanowires grown on SiO2 via vapor-liquid-solid method

Hyun Wook Shin, Jae Cheol Shin, Do Yang Kim, Won Jun Choi, Jeong Woo Choe

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We report the crystal growth of the InxGa1-xAs nanowires (NWs) on SiO2 substrate using metal organic chemical vapor deposition. Au nanoparticles which are disintegrated from thin Au film have been used as a catalyst for the vapor-liquid-solid growth. Electron microscopy characterization is performed to investigate the structural properties of the InxGa1-xAs NW. The InxGa1-xAs NW grown under an optimal condition has a single-crystal wurtzite structure without any misfit dislocation or stacking fault. Strong room temperature photoluminescence peaks are observed from InxGa1-xAs NWs passivated by GaAs. Very low light reflectance is measured at the NW surface in the wavelength range from 250 to 1200 nm. The single crystal In xGa1-xAs NWs are applicable to the various electrical and optical devices.

Original languageEnglish
Pages (from-to)6297-6300
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number8
DOIs
StatePublished - Aug 2014

Keywords

  • MOCVD
  • Nanowires
  • Vapor-liquid-solid

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