Structural and optical properties of the In_xGa_1.xAs nanowires grown on SiO₂ via vapor-liquid-solid method

We report the crystal growth of the In_xGa_1-xAs nanowires (NWs) on SiO₂ substrate using metal organic chemical vapor deposition. Au nanoparticles which are disintegrated from thin Au film have been used as a catalyst for the vapor-liquid-solid growth. Electron microscopy characterization is performed to investigate the structural properties of the In_xGa_1-xAs NW. The In_xGa_1-xAs NW grown under an optimal condition has a single-crystal wurtzite structure without any misfit dislocation or stacking fault. Strong room temperature photoluminescence peaks are observed from In_xGa_1-xAs NWs passivated by GaAs. Very low light reflectance is measured at the NW surface in the wavelength range from 250 to 1200 nm. The single crystal In _xGa_1-xAs NWs are applicable to the various electrical and optical devices.