Structural characteristics of α-Ga2O3 films grown on sapphire by halide vapor phase epitaxy

Soo Hyeon Kim, Mino Yang, Hae Yong Lee, Jong Soon Choi, Hyun Uk Lee, Un Jeong Kim, Moonsang Lee

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

While the importance of α-Ga2O3 crystals is increasingly gaining much interest, the structural behavior of halide vapor phase epitaxy (HVPE) α-Ga2O3 crystals in wet chemical etching has not been explored yet. In this study, we investigate the structural characterization of HVPE α-Ga2O3 materials via alkali KOH solution etching. Further, the activation energy of the etch rate for the materials, etch pit, and surface roughness after wet chemical treatment have been examined. The cross-sectional TEM analysis demonstrates that the triangular-shaped etch pits with (11 2‾ 6) plane are caused by the propagation of threading dislocations in the HVPE α-Ga2O3 crystals.

Original languageEnglish
Article number105534
JournalMaterials Science in Semiconductor Processing
Volume123
DOIs
StatePublished - 1 Mar 2021

Keywords

  • Etch pit
  • Halide vapor epitaxy
  • Wet etch
  • α-GaO

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