Structural characteristics of ternary InxGa1-xAs nanowires on Si (111) grown via Au-catalyzed VLS

Jae Cheol Shin; Do Yang Kim; Jae Hyung Park; Si Duck Oh; Hang Ju Ko; Myung Soo Han; Jae Hun Kim; Kyoung Jin Choi; Hyo Jin Kim

doi:10.1166/jnn.2013.7301

Structural characteristics of ternary In_xGa_1-xAs nanowires on Si (111) grown via Au-catalyzed VLS

Jae Cheol Shin, Do Yang Kim, Jae Hyung Park, Si Duck Oh, Hang Ju Ko, Myung Soo Han, Jae Hun Kim, Kyoung Jin Choi, Hyo Jin Kim

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We have characterized the structural properties of the ternary In _xGa_1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In_xGa_1-xAs NW array grown under optimized condition exceeds 1 × 10⁸/cm². X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the In_xGa _1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.

Original language	English
Pages (from-to)	3511-3514
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	13
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2013.7301
State	Published - May 2013

Keywords

InGaAs
MOCVD
Nanowires
Vapor-liquid-solid

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@article{b90b95e504c04123a4d14a5df977eb39,

title = "Structural characteristics of ternary InxGa1-xAs nanowires on Si (111) grown via Au-catalyzed VLS",

abstract = "We have characterized the structural properties of the ternary In xGa1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1-xAs NW array grown under optimized condition exceeds 1 × 108/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa 1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.",

keywords = "InGaAs, MOCVD, Nanowires, Vapor-liquid-solid",

author = "Shin, {Jae Cheol} and Kim, {Do Yang} and Park, {Jae Hyung} and Oh, {Si Duck} and Ko, {Hang Ju} and Han, {Myung Soo} and Kim, {Jae Hun} and Choi, {Kyoung Jin} and Kim, {Hyo Jin}",

year = "2013",

month = may,

doi = "10.1166/jnn.2013.7301",

language = "English",

volume = "13",

pages = "3511--3514",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "5",

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TY - JOUR

T1 - Structural characteristics of ternary InxGa1-xAs nanowires on Si (111) grown via Au-catalyzed VLS

AU - Shin, Jae Cheol

AU - Kim, Do Yang

AU - Park, Jae Hyung

AU - Oh, Si Duck

AU - Ko, Hang Ju

AU - Han, Myung Soo

AU - Kim, Jae Hun

AU - Choi, Kyoung Jin

AU - Kim, Hyo Jin

PY - 2013/5

Y1 - 2013/5

N2 - We have characterized the structural properties of the ternary In xGa1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1-xAs NW array grown under optimized condition exceeds 1 × 108/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa 1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.

AB - We have characterized the structural properties of the ternary In xGa1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1-xAs NW array grown under optimized condition exceeds 1 × 108/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa 1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.

KW - InGaAs

KW - MOCVD

KW - Nanowires

KW - Vapor-liquid-solid

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U2 - 10.1166/jnn.2013.7301

DO - 10.1166/jnn.2013.7301

M3 - Article

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AN - SCOPUS:84876950111

SN - 1533-4880

VL - 13

SP - 3511

EP - 3514

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 5

ER -

Structural characteristics of ternary In_xGa_1-xAs nanowires on Si (111) grown via Au-catalyzed VLS

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