Structural characteristics of ternary InxGa1-xAs nanowires on Si (111) grown via Au-catalyzed VLS

Jae Cheol Shin; Do Yang Kim; Jae Hyung Park; Si Duck Oh; Hang Ju Ko; Myung Soo Han; Jae Hun Kim; Kyoung Jin Choi; Hyo Jin Kim

doi:10.1166/jnn.2013.7301

Structural characteristics of ternary In_xGa_1-xAs nanowires on Si (111) grown via Au-catalyzed VLS

Jae Cheol Shin
, Do Yang Kim
, Jae Hyung Park
, Si Duck Oh
, Hang Ju Ko
, Myung Soo Han
, Jae Hun Kim
, Kyoung Jin Choi
, Hyo Jin Kim

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We have characterized the structural properties of the ternary In _xGa_1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In_xGa_1-xAs NW array grown under optimized condition exceeds 1 × 10⁸/cm². X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the In_xGa _1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.

Original language	English
Pages (from-to)	3511-3514
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	13
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2013.7301
State	Published - May 2013

Keywords

InGaAs
MOCVD
Nanowires
Vapor-liquid-solid

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@article{b90b95e504c04123a4d14a5df977eb39,

title = "Structural characteristics of ternary InxGa1-xAs nanowires on Si (111) grown via Au-catalyzed VLS",

abstract = "We have characterized the structural properties of the ternary In xGa1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1-xAs NW array grown under optimized condition exceeds 1 × 108/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa 1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.",

keywords = "InGaAs, MOCVD, Nanowires, Vapor-liquid-solid",

author = "Shin, \{Jae Cheol\} and Kim, \{Do Yang\} and Park, \{Jae Hyung\} and Oh, \{Si Duck\} and Ko, \{Hang Ju\} and Han, \{Myung Soo\} and Kim, \{Jae Hun\} and Choi, \{Kyoung Jin\} and Kim, \{Hyo Jin\}",

year = "2013",

month = may,

doi = "10.1166/jnn.2013.7301",

language = "English",

volume = "13",

pages = "3511--3514",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "5",

}

TY - JOUR

T1 - Structural characteristics of ternary InxGa1-xAs nanowires on Si (111) grown via Au-catalyzed VLS

AU - Shin, Jae Cheol

AU - Kim, Do Yang

AU - Park, Jae Hyung

AU - Oh, Si Duck

AU - Ko, Hang Ju

AU - Han, Myung Soo

AU - Kim, Jae Hun

AU - Choi, Kyoung Jin

AU - Kim, Hyo Jin

PY - 2013/5

Y1 - 2013/5

N2 - We have characterized the structural properties of the ternary In xGa1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1-xAs NW array grown under optimized condition exceeds 1 × 108/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa 1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.

AB - We have characterized the structural properties of the ternary In xGa1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1-xAs NW array grown under optimized condition exceeds 1 × 108/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa 1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.

KW - InGaAs

KW - MOCVD

KW - Nanowires

KW - Vapor-liquid-solid

UR - https://www.scopus.com/pages/publications/84876950111

U2 - 10.1166/jnn.2013.7301

DO - 10.1166/jnn.2013.7301

M3 - Article

C2 - 23858890

AN - SCOPUS:84876950111

SN - 1533-4880

VL - 13

SP - 3511

EP - 3514

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 5

ER -

Structural characteristics of ternary In_xGa_1-xAs nanowires on Si (111) grown via Au-catalyzed VLS

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