Structural, electrical and optical properties of TiO                         2                          doped WO                         3                          thin films

P. S. Patil; S. H. Mujawar; A. I. Inamdar; P. S. Shinde; H. P. Deshmukh; S. B. Sadale

doi:10.1016/j.apsusc.2005.03.074

Structural, electrical and optical properties of TiO ₂ doped WO ₃ thin films

P. S. Patil, S. H. Mujawar, A. I. Inamdar, P. S. Shinde, H. P. Deshmukh, S. B. Sadale

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

TiO ₂ doped WO ₃ thin films were deposited onto glass substrates and fluorine doped tin oxide (FTO) coated conducting glass substrates, maintained at 500 °C by pyrolytic decomposition of adequate precursor solution. Equimolar ammonium tungstate ((NH ₄ ) ₂ WO ₄ ) and titanyl acetyl acetonate (TiAcAc) solutions were mixed together at pH 9 in volume proportions and used as a precursor solution for the deposition of TiO ₂ doped WO ₃ thin films. Doping concentrations were varied between 4 and 38%. The effect of TiO ₂ doping concentration on structural, electrical and optical properties of TiO ₂ doped WO ₃ thin films were studied. Values of room temperature electrical resistivity, thermoelectric power and band gap energy (E _g ) were estimated. The films with 38% TiO ₂ doping in WO ₃ exhibited lowest resistivity, n-type electrical conductivity and improved electrochromic performance among all the samples. The values of thermoelectric power (TEP) were in the range of 23-56 μV/K and the direct band gap energy varied between 2.72 and 2.86 eV.

Original language	English
Pages (from-to)	1643-1650
Number of pages	8
Journal	Applied Surface Science
Volume	252
Issue number	5
DOIs	https://doi.org/10.1016/j.apsusc.2005.03.074
State	Published - 15 Dec 2005

Keywords

Electrical and structural properties
Electrochromism
Optical
Spray pyrolysis technique
TiO doped WO thin films

Access to Document

10.1016/j.apsusc.2005.03.074

Cite this

Patil, P. S., Mujawar, S. H., Inamdar, A. I., Shinde, P. S., Deshmukh, H. P., & Sadale, S. B. (2005). Structural, electrical and optical properties of TiO ₂ doped WO ₃ thin films Applied Surface Science, 252(5), 1643-1650. https://doi.org/10.1016/j.apsusc.2005.03.074

@article{2793f06478c84993a6a0cbf20df7de68,

title = " Structural, electrical and optical properties of TiO 2 doped WO 3 thin films ",

abstract = " TiO 2 doped WO 3 thin films were deposited onto glass substrates and fluorine doped tin oxide (FTO) coated conducting glass substrates, maintained at 500 °C by pyrolytic decomposition of adequate precursor solution. Equimolar ammonium tungstate ((NH 4 ) 2 WO 4 ) and titanyl acetyl acetonate (TiAcAc) solutions were mixed together at pH 9 in volume proportions and used as a precursor solution for the deposition of TiO 2 doped WO 3 thin films. Doping concentrations were varied between 4 and 38%. The effect of TiO 2 doping concentration on structural, electrical and optical properties of TiO 2 doped WO 3 thin films were studied. Values of room temperature electrical resistivity, thermoelectric power and band gap energy (E g ) were estimated. The films with 38% TiO 2 doping in WO 3 exhibited lowest resistivity, n-type electrical conductivity and improved electrochromic performance among all the samples. The values of thermoelectric power (TEP) were in the range of 23-56 μV/K and the direct band gap energy varied between 2.72 and 2.86 eV.",

keywords = "Electrical and structural properties, Electrochromism, Optical, Spray pyrolysis technique, TiO doped WO thin films",

author = "Patil, {P. S.} and Mujawar, {S. H.} and Inamdar, {A. I.} and Shinde, {P. S.} and Deshmukh, {H. P.} and Sadale, {S. B.}",

year = "2005",

month = dec,

day = "15",

doi = "10.1016/j.apsusc.2005.03.074",

language = "English",

volume = "252",

pages = "1643--1650",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "5",

}

Patil, PS, Mujawar, SH, Inamdar, AI, Shinde, PS, Deshmukh, HP & Sadale, SB 2005, ' Structural, electrical and optical properties of TiO ₂ doped WO ₃ thin films ', Applied Surface Science, vol. 252, no. 5, pp. 1643-1650. https://doi.org/10.1016/j.apsusc.2005.03.074

Structural, electrical and optical properties of TiO ₂ doped WO ₃ thin films . / Patil, P. S.; Mujawar, S. H.; Inamdar, A. I. et al.
In: Applied Surface Science, Vol. 252, No. 5, 15.12.2005, p. 1643-1650.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Structural, electrical and optical properties of TiO 2 doped WO 3 thin films

AU - Patil, P. S.

AU - Mujawar, S. H.

AU - Inamdar, A. I.

AU - Shinde, P. S.

AU - Deshmukh, H. P.

AU - Sadale, S. B.

PY - 2005/12/15

Y1 - 2005/12/15

N2 - TiO 2 doped WO 3 thin films were deposited onto glass substrates and fluorine doped tin oxide (FTO) coated conducting glass substrates, maintained at 500 °C by pyrolytic decomposition of adequate precursor solution. Equimolar ammonium tungstate ((NH 4 ) 2 WO 4 ) and titanyl acetyl acetonate (TiAcAc) solutions were mixed together at pH 9 in volume proportions and used as a precursor solution for the deposition of TiO 2 doped WO 3 thin films. Doping concentrations were varied between 4 and 38%. The effect of TiO 2 doping concentration on structural, electrical and optical properties of TiO 2 doped WO 3 thin films were studied. Values of room temperature electrical resistivity, thermoelectric power and band gap energy (E g ) were estimated. The films with 38% TiO 2 doping in WO 3 exhibited lowest resistivity, n-type electrical conductivity and improved electrochromic performance among all the samples. The values of thermoelectric power (TEP) were in the range of 23-56 μV/K and the direct band gap energy varied between 2.72 and 2.86 eV.

AB - TiO 2 doped WO 3 thin films were deposited onto glass substrates and fluorine doped tin oxide (FTO) coated conducting glass substrates, maintained at 500 °C by pyrolytic decomposition of adequate precursor solution. Equimolar ammonium tungstate ((NH 4 ) 2 WO 4 ) and titanyl acetyl acetonate (TiAcAc) solutions were mixed together at pH 9 in volume proportions and used as a precursor solution for the deposition of TiO 2 doped WO 3 thin films. Doping concentrations were varied between 4 and 38%. The effect of TiO 2 doping concentration on structural, electrical and optical properties of TiO 2 doped WO 3 thin films were studied. Values of room temperature electrical resistivity, thermoelectric power and band gap energy (E g ) were estimated. The films with 38% TiO 2 doping in WO 3 exhibited lowest resistivity, n-type electrical conductivity and improved electrochromic performance among all the samples. The values of thermoelectric power (TEP) were in the range of 23-56 μV/K and the direct band gap energy varied between 2.72 and 2.86 eV.

KW - Electrical and structural properties

KW - Electrochromism

KW - Optical

KW - Spray pyrolysis technique

KW - TiO doped WO thin films

UR - http://www.scopus.com/inward/record.url?scp=27944487166&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2005.03.074

DO - 10.1016/j.apsusc.2005.03.074

M3 - Article

AN - SCOPUS:27944487166

SN - 0169-4332

VL - 252

SP - 1643

EP - 1650

JO - Applied Surface Science

JF - Applied Surface Science

IS - 5

ER -

Patil PS, Mujawar SH, Inamdar AI, Shinde PS, Deshmukh HP, Sadale SB. Structural, electrical and optical properties of TiO ₂ doped WO ₃ thin films Applied Surface Science. 2005 Dec 15;252(5):1643-1650. doi: 10.1016/j.apsusc.2005.03.074

Structural, electrical and optical properties of TiO ₂ doped WO ₃ thin films

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this