Structural, optical and electrical properties of Ni doped ZnO nanostructures synthesized by solution combustion method

  • Harpreetpal Singh
  • , Vijay Kumar
  • , H. C. Jeon
  • , T. W. Kang
  • , Sunil Kumar

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

In this work, pure and Ni-doped ZnO nanostructures (NSs) with different concentrations of Ni (2, 4, 6%) were successfully prepared via solution combustion method. The TEM photograph shows the formation of flake-like structures with the decrease in size of NSs as the dopant concentration is increased. XRD investigation shows the hexagonal wurtzite structure of doped and undoped ZnO nanostructures with a NiO peak (200) as secondary phase for 4 and 6% dopant concentration level. Broadening of spectra of ZnO around 480 cm−1 in FTIR spectra is observed with the increase of dopant concentration. UV–Visible spectra show the increase in absorbance when the dopant level (Ni2+) is increase from 2 to 4% in ZnO and decrease in absorbance with further increase in dopant level to 6%. An increase in energy band gap is observed in Ni (6%)-doped ZnO due to due to the sp–d interactions taking place between the band electrons and the localised d electrons of Ni2+ ions (Burstein-Moss effect). I–V characteristics reveal the increase in current with the increase in dopant level from 2 to 4% and decrease in current when the dopant level is further increased to 6% which is in agreement with the Burstein-Moss effect.

Original languageEnglish
Pages (from-to)1327-1332
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume29
Issue number2
DOIs
StatePublished - 1 Jan 2018

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