Structural, optical, and magnetic properties of As-doped (Zn 0.93Mn0.07)O thin films

Sejoon Lee; Deuk Young Kim; Yoon Shon; Chong S. Yoon

doi:10.1063/1.2221901

Structural, optical, and magnetic properties of As-doped (Zn _0.93Mn_0.07)O thin films

Sejoon Lee, Deuk Young Kim, Yoon Shon, Chong S. Yoon

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The As-doped (Zn_0.93Mn_0.07)O thin film prepared by As⁺ ion implantation showed a clear peak of (A⁰,X) having acceptor binding energy of 181 meV. The sample showed high T_c ferromagnetism persisting up to 285 K. The contribution of magnetization from Mn ion at 280 K was determined to be 0.13/μ_B/Mn. The improved ferromagnetism is expected to be originated from hole-induced ferromagnetism and enhanced magnetic anisotropy because crystallographically improved sample showed p-type conductivity with hole concentration of 4.8×10₁₈ cm^-3 and hole mobility of 11.8 cm₂ V^-1 s ^-1. These results suggest that high T_c ferromagnetism can be realized by codoping the acceptor dopant and improving the magnetic anisotropy.

Original language	English
Article number	022120
Journal	Applied Physics Letters
Volume	89
Issue number	2
DOIs	https://doi.org/10.1063/1.2221901
State	Published - 2006

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title = "Structural, optical, and magnetic properties of As-doped (Zn 0.93Mn0.07)O thin films",

abstract = "The As-doped (Zn0.93Mn0.07)O thin film prepared by As+ ion implantation showed a clear peak of (A0,X) having acceptor binding energy of 181 meV. The sample showed high Tc ferromagnetism persisting up to 285 K. The contribution of magnetization from Mn ion at 280 K was determined to be 0.13/μB/Mn. The improved ferromagnetism is expected to be originated from hole-induced ferromagnetism and enhanced magnetic anisotropy because crystallographically improved sample showed p-type conductivity with hole concentration of 4.8×1018 cm-3 and hole mobility of 11.8 cm2 V-1 s -1. These results suggest that high Tc ferromagnetism can be realized by codoping the acceptor dopant and improving the magnetic anisotropy.",

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T1 - Structural, optical, and magnetic properties of As-doped (Zn 0.93Mn0.07)O thin films

AU - Lee, Sejoon

AU - Kim, Deuk Young

AU - Shon, Yoon

AU - Yoon, Chong S.

PY - 2006

Y1 - 2006

N2 - The As-doped (Zn0.93Mn0.07)O thin film prepared by As+ ion implantation showed a clear peak of (A0,X) having acceptor binding energy of 181 meV. The sample showed high Tc ferromagnetism persisting up to 285 K. The contribution of magnetization from Mn ion at 280 K was determined to be 0.13/μB/Mn. The improved ferromagnetism is expected to be originated from hole-induced ferromagnetism and enhanced magnetic anisotropy because crystallographically improved sample showed p-type conductivity with hole concentration of 4.8×1018 cm-3 and hole mobility of 11.8 cm2 V-1 s -1. These results suggest that high Tc ferromagnetism can be realized by codoping the acceptor dopant and improving the magnetic anisotropy.

AB - The As-doped (Zn0.93Mn0.07)O thin film prepared by As+ ion implantation showed a clear peak of (A0,X) having acceptor binding energy of 181 meV. The sample showed high Tc ferromagnetism persisting up to 285 K. The contribution of magnetization from Mn ion at 280 K was determined to be 0.13/μB/Mn. The improved ferromagnetism is expected to be originated from hole-induced ferromagnetism and enhanced magnetic anisotropy because crystallographically improved sample showed p-type conductivity with hole concentration of 4.8×1018 cm-3 and hole mobility of 11.8 cm2 V-1 s -1. These results suggest that high Tc ferromagnetism can be realized by codoping the acceptor dopant and improving the magnetic anisotropy.

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Structural, optical, and magnetic properties of As-doped (Zn _0.93Mn_0.07)O thin films

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