TY - GEN
T1 - Studies on modification of channel material and gate recess structures in metamorphic HEMT
AU - Seok, Gyu Choi
AU - Young, Hyun Baek
AU - Jung, Hun Oh
AU - Han, Min
AU - Seok, Ho Bang
AU - Byoung, Chul Jun
AU - Hyun, Chang Park
AU - Jin, Koo Rhee
PY - 2008
Y1 - 2008
N2 - In this study, we have performed both the channel modification of the conventional MHEMT (Metamorphic High Electron Mobility Transistor) and the variation of gate recess. The modified channel consists of the In 0.53Ga0.47As and the InP layers. Since InP has lower impact ionization coefficient than In0.53Ga0.47As, we have adopted the InP-composite channel in the MHEMT. Also, the gate recess width is both functions of breakdown and RF characteristic of a HEMT structure. Therefore, we have studied the breakdown and RF characteristic for various gate recess widths of MHEMT's. We have compared breakdown characteristic of the InP-composite channel with that of conventional MHEMT's. It is shown that on and off state breakdown voltages of the InP-composite channel MHEMT were increased by about 20 and 27 %, respectively, compared with the conventional structure. Also, breakdown voltage of the InP-composite channel MHEMT was increased with increasing gate recess width. The fT was increased with decreasing the gate recess width, whereas fmax was increased with increasing the gate recess width. Also, we extracted small-signal parameters. It was shown that Gd of the InP-composite channel MHEMT is decreased about by 30 % compared with the conventional MHEMT. Therefore, the suppression of the impact ionization in the InP-composite channel increases the breakdown voltage and decreases the output conductance.
AB - In this study, we have performed both the channel modification of the conventional MHEMT (Metamorphic High Electron Mobility Transistor) and the variation of gate recess. The modified channel consists of the In 0.53Ga0.47As and the InP layers. Since InP has lower impact ionization coefficient than In0.53Ga0.47As, we have adopted the InP-composite channel in the MHEMT. Also, the gate recess width is both functions of breakdown and RF characteristic of a HEMT structure. Therefore, we have studied the breakdown and RF characteristic for various gate recess widths of MHEMT's. We have compared breakdown characteristic of the InP-composite channel with that of conventional MHEMT's. It is shown that on and off state breakdown voltages of the InP-composite channel MHEMT were increased by about 20 and 27 %, respectively, compared with the conventional structure. Also, breakdown voltage of the InP-composite channel MHEMT was increased with increasing gate recess width. The fT was increased with decreasing the gate recess width, whereas fmax was increased with increasing the gate recess width. Also, we extracted small-signal parameters. It was shown that Gd of the InP-composite channel MHEMT is decreased about by 30 % compared with the conventional MHEMT. Therefore, the suppression of the impact ionization in the InP-composite channel increases the breakdown voltage and decreases the output conductance.
UR - http://www.scopus.com/inward/record.url?scp=50449100492&partnerID=8YFLogxK
U2 - 10.1109/GSMM.2008.4534542
DO - 10.1109/GSMM.2008.4534542
M3 - Conference contribution
AN - SCOPUS:50449100492
SN - 9781424418855
T3 - 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008
BT - 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008
T2 - 2008 Global Symposium on Millimeter Waves, GSMM 2008
Y2 - 21 April 2008 through 24 April 2008
ER -