Study of Ga1-xMnxAs critical behavior by using thermal diffusivity

Shavkat U. Yuldashev, Khusan T. Igamberdiev, Sejoon Lee, Younghae Kwon, Tae Won Kang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The temperature dependence of the thermal diffusivity has been measured in the close vicinity of the magnetic phase transition in Ga1-xMnxAs. The thermal diffusivity of Ga1-xMnxAs samples demonstrated a pronounced λ-shaped peak, which indicates the existence of a second-order phase transition in the samples. The thermal diffusivity peak maximum is located near the Curie temperature; therefore, it is attributed to a ferromagnetic-paramagnetic phase transition. Taking into account that the inverse of the thermal diffusivity has the same critical behavior as the specific heat, we determine the critical exponent α. The critical behavior of the specific heat of the Ga1-xMnxAs samples is well described by the mean-field, including Gaussian fluctuations, model.

Original languageEnglish
Pages (from-to)431-434
Number of pages4
JournalJournal of the Korean Physical Society
Volume59
Issue number21
DOIs
StatePublished - 12 Aug 2011

Keywords

  • Critical behavior
  • Ferromagnetic semiconductors
  • GaMnAs

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