Abstract
The temperature dependence of the thermal diffusivity has been measured in the close vicinity of the magnetic phase transition in Ga1-xMnxAs. The thermal diffusivity of Ga1-xMnxAs samples demonstrated a pronounced λ-shaped peak, which indicates the existence of a second-order phase transition in the samples. The thermal diffusivity peak maximum is located near the Curie temperature; therefore, it is attributed to a ferromagnetic-paramagnetic phase transition. Taking into account that the inverse of the thermal diffusivity has the same critical behavior as the specific heat, we determine the critical exponent α. The critical behavior of the specific heat of the Ga1-xMnxAs samples is well described by the mean-field, including Gaussian fluctuations, model.
Original language | English |
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Pages (from-to) | 431-434 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 59 |
Issue number | 21 |
DOIs | |
State | Published - 12 Aug 2011 |
Keywords
- Critical behavior
- Ferromagnetic semiconductors
- GaMnAs