Study of hafnium silicate treated with NO Gas annealing

Dong Chan Suh; Dae Hong Ko; Mann Ho Cho; Kwun Bum Chung

doi:10.3938/jkps.54.637

Study of hafnium silicate treated with NO Gas annealing

Dong Chan Suh
, Dae Hong Ko
, Mann Ho Cho
, Kwun Bum Chung

Department of Physics

Yonsei University

Research output: Contribution to journal › Article › peer-review

Abstract

The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.

Original language	English
Pages (from-to)	637-642
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	54
Issue number	2
DOIs	https://doi.org/10.3938/jkps.54.637
State	Published - Feb 2009

Keywords

Atomic layer deposition
Hafnium silicate
High-k

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title = "Study of hafnium silicate treated with NO Gas annealing",

abstract = "The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.",

keywords = "Atomic layer deposition, Hafnium silicate, High-k",

author = "Suh, \{Dong Chan\} and Ko, \{Dae Hong\} and Cho, \{Mann Ho\} and Chung, \{Kwun Bum\}",

year = "2009",

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doi = "10.3938/jkps.54.637",

language = "English",

volume = "54",

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T1 - Study of hafnium silicate treated with NO Gas annealing

AU - Suh, Dong Chan

AU - Ko, Dae Hong

AU - Cho, Mann Ho

AU - Chung, Kwun Bum

PY - 2009/2

Y1 - 2009/2

N2 - The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.

AB - The physical and the electrical properties of nitrided hafnium-silicate films treated with NO gas annealing were investigated using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, near-edge X-ray absorption fine structure and capacitance-voltage measurements. We confirmed that nitrogen incorporation during the NO gas annealing treatment enhanced the thermal stability of Hf silicate. The suppression of phase separation was observed in hafnium-silicate films with high nitrogen contents. Moreover, small hysteresis changes were observed in the C-V curves. The negative shift of the threshold voltage was caused by the incorporation of nitrogen in the hafnium silicate films.

KW - Atomic layer deposition

KW - Hafnium silicate

KW - High-k

UR - https://www.scopus.com/pages/publications/62149093553

U2 - 10.3938/jkps.54.637

DO - 10.3938/jkps.54.637

M3 - Article

AN - SCOPUS:62149093553

SN - 0374-4884

VL - 54

SP - 637

EP - 642

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 2

ER -

Study of hafnium silicate treated with NO Gas annealing

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Keywords

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