Study of the Fracture Mechanisms of Electroplated Metallization Systems Using In Situ Microtension Test

Abstract: This framework assesses the mechanical behavior of some potential thin/thick metallization systems in use as either ohmic contacts for diamond semi-conductors or for metallization on copper double bounded ceramic substrates present in the next-generation power electronics packaging. The interesting and unique characteristic of this packaging is the use of diamond as a semi-conductor material instead of silicon to increase the lifetime of embedded power converters for use in aeronautical applications. Theoretically, such packaging is able to withstand temperatures of up to 300 °C without breaking the semi-conductor, provided that the constitutive materials of the packaging are compatible. Metallization is very important to protect the chips and substrates. Therefore, we address this issue in the present work. The tested metallization systems are Ni/Au, Ni/Cr/Au and Ni/Cr. These specific systems were studied since they can be used in conjunction with existing bonding technologies, including AuGe soldering, Ag–In Transient liquid Phase Bonding and silver nanoparticle sintering. The metallization is achieved via electrodeposition, and a mechanical test, consisting of a microtension technique, is carried out at room temperature inside a scanning electron microscopy chamber. The technique permits observations the cracks initiation and growth in the metallization to locate the deformation zones and identify the fracture mechanisms. Different failure mechanisms were shown to occur depending on the metallic layers deposited on top of the copper substrate. The density of these cracks depends on the imposed load and the involved metallization. These observations will help choose the metallization that is compatible with the particular bonding material, and manage mechanical stress due to thermal cycling so that they can be used as a constitutive component for high-temperature power electronics packaging. Graphical Abstract: [Figure not available: see fulltext.].