Study of work-function variation for high-κ/metal-gate Ge-source tunnel field-effect transistors

Youngtaek Lee, Hyohyun Nam, Jung Dong Park, Changhwan Shin

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

The work-function variation (WFV) in high-κ/metal-gate (HK/MG) Ge-source tunnel FETs (TFETs) is evaluated using technology computer-aided design simulations. By matching the simulation results with the plot for the ratio of the average grain size to the gate area (i.e., the RGG plot), we find that the slope in the RGG plot for the TFET can be significantly altered depending on three main factors, namely, the gate width, average grain size, and equivalent oxide thickness. In addition, it is verified that the variation of channel potential affects the WFV-induced threshold voltage variation in HK/MG Ge-source TFETs.

Original languageEnglish
Article number7118152
Pages (from-to)2143-2147
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume62
Issue number7
DOIs
StatePublished - 1 Jul 2015

Keywords

  • Characterization
  • random variation
  • RGG
  • tunnel FET (TFET)
  • variability
  • work-function variation (WFV)

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