Study of Work-Function Variation in High-κ/Metal-Gate Gate-All-Around Nanowire MOSFET

Hyohyun Nam, Youngtaek Lee, Jung Dong Park, Changhwan Shin

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

In this paper, threshold-voltage (VTH) variation caused by work-function variation (WFV) in a high- κ /metal-gate gate-all-around (GAA) nanowire MOSFET is quantitatively estimated through 3-D technology computer-aided design simulations. It is determined that the ratio of average grain size to gate area (RGG) [i.e., RGG= Gsize,eff /(gate area)0.5] for the GAA nanowire MOSFET should use the effective grain size (Gsize,eff), instead of using the nominal grain size (Gsize). Gsize,eff is regarded as the effective grain size around the channel region, and it is smaller than the original grain size. In order to compare the WFV-induced VTH variation in GAA nanowire MOSFET against FinFET, the amount of WFV-induced VTH variation is plotted using the RGG concept with Gsize,eff. As a result, it was concluded that the cylinder-shaped GAA nanowire MOSFET has better immunity to the WFV-induced VTH variation by 12.5%, compared with FinFET.

Original languageEnglish
Article number7488993
Pages (from-to)3338-3341
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume63
Issue number8
DOIs
StatePublished - 2016

Keywords

  • Characterization
  • gate-all-around (GAA) MOSFET
  • nanowire MOSFET
  • ratio of average grain size to gate area
  • variability
  • work-function variation (WFV)

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