TY - JOUR
T1 - Study of Work-Function Variation in High-κ/Metal-Gate Gate-All-Around Nanowire MOSFET
AU - Nam, Hyohyun
AU - Lee, Youngtaek
AU - Park, Jung Dong
AU - Shin, Changhwan
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2016
Y1 - 2016
N2 - In this paper, threshold-voltage (VTH) variation caused by work-function variation (WFV) in a high- κ /metal-gate gate-all-around (GAA) nanowire MOSFET is quantitatively estimated through 3-D technology computer-aided design simulations. It is determined that the ratio of average grain size to gate area (RGG) [i.e., RGG= Gsize,eff /(gate area)0.5] for the GAA nanowire MOSFET should use the effective grain size (Gsize,eff), instead of using the nominal grain size (Gsize). Gsize,eff is regarded as the effective grain size around the channel region, and it is smaller than the original grain size. In order to compare the WFV-induced VTH variation in GAA nanowire MOSFET against FinFET, the amount of WFV-induced VTH variation is plotted using the RGG concept with Gsize,eff. As a result, it was concluded that the cylinder-shaped GAA nanowire MOSFET has better immunity to the WFV-induced VTH variation by 12.5%, compared with FinFET.
AB - In this paper, threshold-voltage (VTH) variation caused by work-function variation (WFV) in a high- κ /metal-gate gate-all-around (GAA) nanowire MOSFET is quantitatively estimated through 3-D technology computer-aided design simulations. It is determined that the ratio of average grain size to gate area (RGG) [i.e., RGG= Gsize,eff /(gate area)0.5] for the GAA nanowire MOSFET should use the effective grain size (Gsize,eff), instead of using the nominal grain size (Gsize). Gsize,eff is regarded as the effective grain size around the channel region, and it is smaller than the original grain size. In order to compare the WFV-induced VTH variation in GAA nanowire MOSFET against FinFET, the amount of WFV-induced VTH variation is plotted using the RGG concept with Gsize,eff. As a result, it was concluded that the cylinder-shaped GAA nanowire MOSFET has better immunity to the WFV-induced VTH variation by 12.5%, compared with FinFET.
KW - Characterization
KW - gate-all-around (GAA) MOSFET
KW - nanowire MOSFET
KW - ratio of average grain size to gate area
KW - variability
KW - work-function variation (WFV)
UR - http://www.scopus.com/inward/record.url?scp=84973879002&partnerID=8YFLogxK
U2 - 10.1109/TED.2016.2574328
DO - 10.1109/TED.2016.2574328
M3 - Article
AN - SCOPUS:84973879002
SN - 0018-9383
VL - 63
SP - 3338
EP - 3341
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
M1 - 7488993
ER -