Study on small signal characteristics of short channel MOSFETs by using α-power model

Kyooho Jung; Deukyoung Kim; Minkyu Song; Woong Jung; Hyunsik Im

Study on small signal characteristics of short channel MOSFETs by using α-power model

Kyooho Jung, Deukyoung Kim, Minkyu Song, Woong Jung, Hyunsik Im

Division of System Semiconductor

Dongguk University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have investigated the transconductances (g _m, g _ds) of MOSFETs consisting of a deep-submicron short channel, by taking into account channel length modulation and using α-power model. Experimental results for g _m and g _ds from short channel MOSFETs are presented, compared with modeled data, and understood in a qualitative way. The modeled results for g _m agree with the experimental data, and a new approach to extract ΔL explains the qualitative properties of g _ds as a function of V _gs and L.

Original language	English
Pages (from-to)	S924-S927
Journal	Journal of the Korean Physical Society
Volume	45
Issue number	SUPPL.
State	Published - Dec 2004

Keywords

ΔL
G
G
Transconductance

Cite this

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title = "Study on small signal characteristics of short channel MOSFETs by using α-power model",

abstract = "We have investigated the transconductances (g m, g ds) of MOSFETs consisting of a deep-submicron short channel, by taking into account channel length modulation and using α-power model. Experimental results for g m and g ds from short channel MOSFETs are presented, compared with modeled data, and understood in a qualitative way. The modeled results for g m agree with the experimental data, and a new approach to extract ΔL explains the qualitative properties of g ds as a function of V gs and L.",

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T1 - Study on small signal characteristics of short channel MOSFETs by using α-power model

AU - Jung, Kyooho

AU - Kim, Deukyoung

AU - Song, Minkyu

AU - Jung, Woong

AU - Im, Hyunsik

PY - 2004/12

Y1 - 2004/12

N2 - We have investigated the transconductances (g m, g ds) of MOSFETs consisting of a deep-submicron short channel, by taking into account channel length modulation and using α-power model. Experimental results for g m and g ds from short channel MOSFETs are presented, compared with modeled data, and understood in a qualitative way. The modeled results for g m agree with the experimental data, and a new approach to extract ΔL explains the qualitative properties of g ds as a function of V gs and L.

AB - We have investigated the transconductances (g m, g ds) of MOSFETs consisting of a deep-submicron short channel, by taking into account channel length modulation and using α-power model. Experimental results for g m and g ds from short channel MOSFETs are presented, compared with modeled data, and understood in a qualitative way. The modeled results for g m agree with the experimental data, and a new approach to extract ΔL explains the qualitative properties of g ds as a function of V gs and L.

KW - ΔL

KW - G

KW - Transconductance

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M3 - Article

AN - SCOPUS:12744262259

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SP - S924-S927

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL.

ER -

Study on small signal characteristics of short channel MOSFETs by using α-power model

Abstract

Keywords

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