Abstract
Recent advances in electron beam lithography have made possible the fabrication of pseudomorphic high electron mobility transistors (PHEMTs) with gate length well in the nanometer regime. This gate processes mostly require thin dielectric support layers in order to prevent collapse of gate head due to poor mechanical reliability in the narrow gate foot. However, this layer is a major cause for parasitic capacitance. In this paper, we have demonstrated the fabrication of a 70nm foot print of the T-shaped gate by using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure method without a thin dielectric supporting layer on the substrate.
Original language | English |
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Pages (from-to) | 7-11 |
Number of pages | 5 |
Journal | Materials Science in Semiconductor Processing |
Volume | 7 |
Issue number | 1-2 |
DOIs | |
State | Published - Feb 2004 |
Keywords
- e-Beam lithography
- P(MMA-MAA)
- PMMA
- T-gate
- ZEP520