Sub-half-micrometer width 2-D MESFET

W. C.B. Peatman; R. Tsai; T. Ytterdal; M. Hurt; H. Park; J. Gonzales; M. Shur

doi:10.1109/55.484117

Sub-half-micrometer width 2-D MESFET

W. C.B. Peatman
, R. Tsai
, T. Ytterdal
, M. Hurt
, H. Park
, J. Gonzales
, M. Shur

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Two-dimensional (2-D) MESFET's having sub-half-micron channel widths have been fabricated on double-δ-doped Al_0.24Ga_0.76As/In_0.18Ga_0.82As/GaAs heterostructures. The 2-D MESFET operates like a normal transistor at room temperature but uses very few electrons in the channel (about 500 at peak current and 5 at threshold). Also, the Narrow Channel Effect (NCE) and Drain-Induced Barrier Lowering (DIBL) (two effects which limit the minimum power operation in conventional devices) have been practically eliminated. The 0.4 micron wide device had an ON/OFF current ratio of 10⁵, a peak transconductance of 100 mS/mm, a threshold voltage of 0.3 V, a saturation voltage of 0.2 V, and a subthreshold ideality factor of 1.1. The 2-D MESFET DCFL inverter had a switching voltage and noise margin of 0.35 V and 0.26 V, respectively, at 0.8 V supply. These room temperature results suggest that the 2-D MESFET is an excellent candidate for future low power digital eletronics applications.

Original language	English
Pages (from-to)	40-42
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/55.484117
State	Published - Feb 1996

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title = "Sub-half-micrometer width 2-D MESFET",

abstract = "Two-dimensional (2-D) MESFET's having sub-half-micron channel widths have been fabricated on double-δ-doped Al0.24Ga0.76As/In0.18Ga0.82As/GaAs heterostructures. The 2-D MESFET operates like a normal transistor at room temperature but uses very few electrons in the channel (about 500 at peak current and 5 at threshold). Also, the Narrow Channel Effect (NCE) and Drain-Induced Barrier Lowering (DIBL) (two effects which limit the minimum power operation in conventional devices) have been practically eliminated. The 0.4 micron wide device had an ON/OFF current ratio of 105, a peak transconductance of 100 mS/mm, a threshold voltage of 0.3 V, a saturation voltage of 0.2 V, and a subthreshold ideality factor of 1.1. The 2-D MESFET DCFL inverter had a switching voltage and noise margin of 0.35 V and 0.26 V, respectively, at 0.8 V supply. These room temperature results suggest that the 2-D MESFET is an excellent candidate for future low power digital eletronics applications.",

author = "Peatman, \{W. C.B.\} and R. Tsai and T. Ytterdal and M. Hurt and H. Park and J. Gonzales and M. Shur",

year = "1996",

month = feb,

doi = "10.1109/55.484117",

language = "English",

volume = "17",

pages = "40--42",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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T1 - Sub-half-micrometer width 2-D MESFET

AU - Peatman, W. C.B.

AU - Tsai, R.

AU - Ytterdal, T.

AU - Hurt, M.

AU - Park, H.

AU - Gonzales, J.

AU - Shur, M.

PY - 1996/2

Y1 - 1996/2

N2 - Two-dimensional (2-D) MESFET's having sub-half-micron channel widths have been fabricated on double-δ-doped Al0.24Ga0.76As/In0.18Ga0.82As/GaAs heterostructures. The 2-D MESFET operates like a normal transistor at room temperature but uses very few electrons in the channel (about 500 at peak current and 5 at threshold). Also, the Narrow Channel Effect (NCE) and Drain-Induced Barrier Lowering (DIBL) (two effects which limit the minimum power operation in conventional devices) have been practically eliminated. The 0.4 micron wide device had an ON/OFF current ratio of 105, a peak transconductance of 100 mS/mm, a threshold voltage of 0.3 V, a saturation voltage of 0.2 V, and a subthreshold ideality factor of 1.1. The 2-D MESFET DCFL inverter had a switching voltage and noise margin of 0.35 V and 0.26 V, respectively, at 0.8 V supply. These room temperature results suggest that the 2-D MESFET is an excellent candidate for future low power digital eletronics applications.

AB - Two-dimensional (2-D) MESFET's having sub-half-micron channel widths have been fabricated on double-δ-doped Al0.24Ga0.76As/In0.18Ga0.82As/GaAs heterostructures. The 2-D MESFET operates like a normal transistor at room temperature but uses very few electrons in the channel (about 500 at peak current and 5 at threshold). Also, the Narrow Channel Effect (NCE) and Drain-Induced Barrier Lowering (DIBL) (two effects which limit the minimum power operation in conventional devices) have been practically eliminated. The 0.4 micron wide device had an ON/OFF current ratio of 105, a peak transconductance of 100 mS/mm, a threshold voltage of 0.3 V, a saturation voltage of 0.2 V, and a subthreshold ideality factor of 1.1. The 2-D MESFET DCFL inverter had a switching voltage and noise margin of 0.35 V and 0.26 V, respectively, at 0.8 V supply. These room temperature results suggest that the 2-D MESFET is an excellent candidate for future low power digital eletronics applications.

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U2 - 10.1109/55.484117

DO - 10.1109/55.484117

M3 - Article

AN - SCOPUS:0030085794

SN - 0741-3106

VL - 17

SP - 40

EP - 42

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Sub-half-micrometer width 2-D MESFET

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