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Subgap leakage and interface states in superconductor-insulator- superconductor tunnel junctions

  • Hyunsik Im
  • , Yu A. Pashkin
  • , Yongmin Kim
  • , T. F. Li
  • , Kyooho Jung
  • , O. Astafiev
  • , J. S. Tsai
  • RIKEN
  • Japan Science and Technology Agency
  • RAS - P.N. Lebedev Physics Institute
  • Dongguk University
  • Tsinghua University

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We use tunneling spectroscopy in Al and Nb based superconductor-insulator- superconductor (SIS) junctions to demonstrate the existence of metallic quasiparticle states at the interface of a superconducting electrode and an oxide layer, introducing a new method to directly evaluate the interface quasiparticle areal density of states. Current-voltage (I-V) characteristics typically observed in metal-insulator-superconductor (MIS) junctions are observed in the subgap voltage region. The turn-on voltage of the MIS-type leakage is found to be determined by the superconducting electrode with a smaller gap energy (Δ), and its magnitude depends on the nature of the interface. Our experiment suggests that the interface plays a key role in contributing to the subgap leakage influencing the performance of superconducting circuits.

Original languageEnglish
Pages (from-to)S832-S833
JournalPhysica C: Superconductivity and its Applications
Volume470
Issue numberSUPPL.1
DOIs
StatePublished - Dec 2010

Keywords

  • Angle deposition
  • Interface states
  • Subgap leakage
  • Tunneling spectroscopy

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