Abstract
We use tunneling spectroscopy in Al and Nb based superconductor-insulator- superconductor (SIS) junctions to demonstrate the existence of metallic quasiparticle states at the interface of a superconducting electrode and an oxide layer, introducing a new method to directly evaluate the interface quasiparticle areal density of states. Current-voltage (I-V) characteristics typically observed in metal-insulator-superconductor (MIS) junctions are observed in the subgap voltage region. The turn-on voltage of the MIS-type leakage is found to be determined by the superconducting electrode with a smaller gap energy (Δ), and its magnitude depends on the nature of the interface. Our experiment suggests that the interface plays a key role in contributing to the subgap leakage influencing the performance of superconducting circuits.
| Original language | English |
|---|---|
| Pages (from-to) | S832-S833 |
| Journal | Physica C: Superconductivity and its Applications |
| Volume | 470 |
| Issue number | SUPPL.1 |
| DOIs | |
| State | Published - Dec 2010 |
Keywords
- Angle deposition
- Interface states
- Subgap leakage
- Tunneling spectroscopy
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