Substrate temperature dependent opto-electronic properties of perfume atomized CdO thin films

M. Ravikumar; R. Chandramohan; S. Valanarasu; R. Manogowri; A. Kathalingam

doi:10.1080/24701556.2017.1357600

Substrate temperature dependent opto-electronic properties of perfume atomized CdO thin films

M. Ravikumar, R. Chandramohan, S. Valanarasu, R. Manogowri, A. Kathalingam

Millimeterwave Innovation Technology Research Center

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

CdO films were prepared by perfume atomizer technique. The prepared films showed cubic crystal structure. SEM image of the films indicated that there is an increase in grain size with substrate temperature. Optical absorption studies revealed that increase of substrate temperature can improve the absorption property of the films. Optical band gap of the film attained maximum value of 2.36 eV for the temperature at 350°C. I-V characteristics of films have shown an improvement in conductivity of the films with increase of substrate temperature and obtained photocurrent of 4.07 × 10⁻⁴ A for the film coated at 350°C.

Original language	English
Pages (from-to)	1495-1500
Number of pages	6
Journal	Inorganic and Nano-Metal Chemistry
Volume	47
Issue number	11
DOIs	https://doi.org/10.1080/24701556.2017.1357600
State	Published - 2 Nov 2017

Keywords

CdO thin film
Coating temperature
Electrical properties
Optical properties
p-Si/n-CdO heterojunction X-ray diffraction

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10.1080/24701556.2017.1357600

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title = "Substrate temperature dependent opto-electronic properties of perfume atomized CdO thin films",

abstract = "CdO films were prepared by perfume atomizer technique. The prepared films showed cubic crystal structure. SEM image of the films indicated that there is an increase in grain size with substrate temperature. Optical absorption studies revealed that increase of substrate temperature can improve the absorption property of the films. Optical band gap of the film attained maximum value of 2.36 eV for the temperature at 350°C. I-V characteristics of films have shown an improvement in conductivity of the films with increase of substrate temperature and obtained photocurrent of 4.07 × 10−4 A for the film coated at 350°C.",

keywords = "CdO thin film, Coating temperature, Electrical properties, Optical properties, p-Si/n-CdO heterojunction X-ray diffraction",

author = "M. Ravikumar and R. Chandramohan and S. Valanarasu and R. Manogowri and A. Kathalingam",

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T1 - Substrate temperature dependent opto-electronic properties of perfume atomized CdO thin films

AU - Ravikumar, M.

AU - Chandramohan, R.

AU - Valanarasu, S.

AU - Manogowri, R.

AU - Kathalingam, A.

PY - 2017/11/2

Y1 - 2017/11/2

N2 - CdO films were prepared by perfume atomizer technique. The prepared films showed cubic crystal structure. SEM image of the films indicated that there is an increase in grain size with substrate temperature. Optical absorption studies revealed that increase of substrate temperature can improve the absorption property of the films. Optical band gap of the film attained maximum value of 2.36 eV for the temperature at 350°C. I-V characteristics of films have shown an improvement in conductivity of the films with increase of substrate temperature and obtained photocurrent of 4.07 × 10−4 A for the film coated at 350°C.

AB - CdO films were prepared by perfume atomizer technique. The prepared films showed cubic crystal structure. SEM image of the films indicated that there is an increase in grain size with substrate temperature. Optical absorption studies revealed that increase of substrate temperature can improve the absorption property of the films. Optical band gap of the film attained maximum value of 2.36 eV for the temperature at 350°C. I-V characteristics of films have shown an improvement in conductivity of the films with increase of substrate temperature and obtained photocurrent of 4.07 × 10−4 A for the film coated at 350°C.

KW - CdO thin film

KW - Coating temperature

KW - Electrical properties

KW - Optical properties

KW - p-Si/n-CdO heterojunction X-ray diffraction

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SN - 2470-1556

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SP - 1495

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JO - Inorganic and Nano-Metal Chemistry

JF - Inorganic and Nano-Metal Chemistry

IS - 11

ER -

Substrate temperature dependent opto-electronic properties of perfume atomized CdO thin films

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