Suppression of boron diffusion using carbon co-implantation in DRAM

Suk Hun Lee; Se Geun Park; Shin Deuk Kim; Hyuck Chai Jung; Il Gweon Kim; Dong Ho Kang; Dae Jung Kim; Kyu Pil Lee; Joo Sun Choi; Jung Woo Baek; Moonsuk Choi; Yongkook Park; Changhwan Choi; Jin Hong Park

doi:10.1016/j.materresbull.2016.03.011

Suppression of boron diffusion using carbon co-implantation in DRAM

Suk Hun Lee, Se Geun Park, Shin Deuk Kim, Hyuck Chai Jung, Il Gweon Kim, Dong Ho Kang, Dae Jung Kim, Kyu Pil Lee, Joo Sun Choi, Jung Woo Baek, Moonsuk Choi, Yongkook Park, Changhwan Choi, Jin Hong Park

Department of Industrial and Systems Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (V_TH) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the V_TH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.

Original language	English
Pages (from-to)	22-25
Number of pages	4
Journal	Materials Research Bulletin
Volume	82
DOIs	https://doi.org/10.1016/j.materresbull.2016.03.011
State	Published - 1 Oct 2016

Keywords

A. Electronic materials
A. Semiconductor
D. Defect
D. Diffusion
D. Electrical properties

Access to Document

10.1016/j.materresbull.2016.03.011

Cite this

@article{3c50ad32aad0415fb11c70417d6b6238,

title = "Suppression of boron diffusion using carbon co-implantation in DRAM",

abstract = "In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.",

keywords = "A. Electronic materials, A. Semiconductor, D. Defect, D. Diffusion, D. Electrical properties",

author = "Lee, {Suk Hun} and Park, {Se Geun} and Kim, {Shin Deuk} and Jung, {Hyuck Chai} and Kim, {Il Gweon} and Kang, {Dong Ho} and Kim, {Dae Jung} and Lee, {Kyu Pil} and Choi, {Joo Sun} and Baek, {Jung Woo} and Moonsuk Choi and Yongkook Park and Changhwan Choi and Park, {Jin Hong}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

month = oct,

day = "1",

doi = "10.1016/j.materresbull.2016.03.011",

language = "English",

volume = "82",

pages = "22--25",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Suppression of boron diffusion using carbon co-implantation in DRAM

AU - Lee, Suk Hun

AU - Park, Se Geun

AU - Kim, Shin Deuk

AU - Jung, Hyuck Chai

AU - Kim, Il Gweon

AU - Kang, Dong Ho

AU - Kim, Dae Jung

AU - Lee, Kyu Pil

AU - Choi, Joo Sun

AU - Baek, Jung Woo

AU - Choi, Moonsuk

AU - Park, Yongkook

AU - Choi, Changhwan

AU - Park, Jin Hong

PY - 2016/10/1

Y1 - 2016/10/1

N2 - In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.

AB - In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.

KW - A. Electronic materials

KW - A. Semiconductor

KW - D. Defect

KW - D. Diffusion

KW - D. Electrical properties

UR - http://www.scopus.com/inward/record.url?scp=84961226861&partnerID=8YFLogxK

U2 - 10.1016/j.materresbull.2016.03.011

DO - 10.1016/j.materresbull.2016.03.011

M3 - Article

AN - SCOPUS:84961226861

SN - 0025-5408

VL - 82

SP - 22

EP - 25

JO - Materials Research Bulletin

JF - Materials Research Bulletin

ER -

Suppression of boron diffusion using carbon co-implantation in DRAM

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this